X-On Electronics has gained recognition as a prominent supplier of RV1C002UNT2CL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RV1C002UNT2CL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RV1C002UNT2CL ROHM

Hot RV1C002UNT2CL electronic component of ROHM
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See Product Specifications
Part No.RV1C002UNT2CL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch Small Signal MOSFET
Datasheet: RV1C002UNT2CL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
105: USD 0.0158 ea
Line Total: USD 1.66 
Availability - 181
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 105  Multiples: 1
Pack Size: 1
Availability Price Quantity
7760
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 8000
Multiples : 8000
8000 : USD 0.0462
16000 : USD 0.0462
32000 : USD 0.0462
40000 : USD 0.0462
120000 : USD 0.0462

60
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 5
Multiples : 5
5 : USD 0.086
50 : USD 0.0699
150 : USD 0.062
500 : USD 0.0559
2500 : USD 0.0454
5000 : USD 0.0429

55612
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1859
10 : USD 0.1144
100 : USD 0.0572
2500 : USD 0.0561
8000 : USD 0.0407
24000 : USD 0.0396

7760
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 863
Multiples : 1
863 : USD 0.1139
1000 : USD 0.1102
2500 : USD 0.107
5000 : USD 0.1041

181
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 105
Multiples : 1
105 : USD 0.0158

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Series
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the RV1C002UNT2CL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RV1C002UNT2CL and other electronic components in the MOSFETs category and beyond.

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The RV1C002UNT2CL is an N-Channel enhancement mode, small signal MOSFET designed and manufactured by ROHM. It has a maximum drain source voltage (VDS) of 20V and a rated drain current (ID) of 2A when used in a single pulse mode. It features an ON-resistance (Rdson) of 0.2O at an operating temperature of -55°C to +150°C. It is designed for applications such as switch, linear and level regulators. The device has excellent performance characteristics due to its low Rdson and fast switching, allowing for low power solution designs. Additionally, the body diode features low forward voltage, low reverse leakage, and high temperature endurance. The RV1C002UNT2CL is suitable for a range of general-purpose applications in consumer and industrial electronics.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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