NIF62514T1G ON Semiconductor

NIF62514 Self-Protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to NIF62514 MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit DraintoSource Voltage Internally Clamped V 40 Vdc DSS DraintoGate Voltage Internally Clamped (R = 1.0 M ) V 40 Vdc GS DGR GatetoSource Voltage V 16 Vdc GS Drain Current Continuous T = 25C I A D Internally Limited Continuous T = 100C I A D Pulsed (t 10 s) I p DM Total Power Dissipation P W D T = 25C (Note 1) 1.1 A T = 25C (Note 2) 1.73 A T = 25C (Note 3) 8.93 A Thermal Resistance, C/W Junction toTab R 14 JT JunctiontoAmbient (Note 1) R 114 JA JunctiontoAmbient (Note 2) R 72.3 JA Single Pulse DraintoSource Avalanche Energy E 300 mJ AS (V = 25 Vdc, V = 5.0 Vdc, V = 40 Vdc, I = 2.8 Apk, L = 80 mH, R = 25 ) DD GS DS L G Operating and Storage Temperature Range T , T 55 to 150 C J stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted onto min pad board. 2. Mounted onto 1 pad board. 3. Mounted onto large heatsink. + I D DRAIN I G VDS GATE + SOURCE VGS Figure 1. Voltage and Current Convention