RUR040N02FRARUR040N02 Transistors AEC-Q101 Qualified 1.5V Drive Nch MOSFET RUR040N02 RUR040N02FRA z Structure z Dimensions (Unit : mm) Silicon N-channel TSMT3 MOSFET z Features 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol : XF (3) Drain z Application Switching z Equivalent circuit z Packaging specifications (3) Package Taping Type Code TL Basic ordering unit (pieces) 3000 RUR040N02FRA RUR040N02 (1) 2 1 (2) (1) Gate (2) Source 1 ESD PROTECTION DIODE (3) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage V 20 V DSS Gate-source voltage VGSS 10 V Continuous ID 4.0 A Drain current 1 Pulsed I 8.0 A DP Source current Continuous IS 0.8 A 1 (Body diode) Pulsed ISP 8.0 A 2 Total power dissipation P 1.0 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle 1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 125 C / W Mounted on a ceramic board 1/4RUR040N02FRA RUR040N02 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AV GS=10V, VDS=0V Drain-source breakdown voltage V(BR) DSS 20 VID=1mA, VGS=0V Zero gate voltage drain current I 1 AV =20V, V =0V DSS DS GS Gate threshold voltage VGS (th) 0.3 1.3 V VDS=10V, ID=1mA 25 35 m ID=4.0A, VGS=4.5V 33 46 m I =4.0A, V =2.5V Static drain-source on-state D GS R DS (on) resistance 42 59 m ID=2.0A, VGS=1.8V 55 110 m I =0.8A, V =1.5V D GS Forward transfer admittance Y 5.0 SV =10V, I =4.0A fs DS D Input capacitance Ciss 680 pF VDS=10V Output capacitance Coss 150 pF VGS=0V Reverse transfer capacitance C 90 pF f=1MHz rss t d (on) Turn-on delay time 10 ns ID=2.0A, VDD 10V Rise time tr 30 ns VGS=4.5V Turn-off delay time td (off) 50 ns RL 5, R G=10 t Fall time f 60 ns Total gate charge Qg 8 nC V 10V ID= 4.0A, DD Gate-source charge Qgs 1.8 nC V =4.5V GS RL 2.5, R G=10 Gate-drain charge Qgd 1.3 nC Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V 1.2 V I =0.8A, V =0V SD S GS Pulsed 2/4