X-On Electronics has gained recognition as a prominent supplier of RTQ035N03TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RTQ035N03TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RTQ035N03TR ROHM

RTQ035N03TR electronic component of ROHM
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See Product Specifications
Part No.RTQ035N03TR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET N-CH 30V 3.5A TSMT6
Datasheet: RTQ035N03TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.215 ea
Line Total: USD 1.08 
Availability - 2772
Ship by Wed. 08 Jan to Mon. 13 Jan
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2772
Ship by Wed. 08 Jan to Mon. 13 Jan
MOQ : 5
Multiples : 5
5 : USD 0.215
50 : USD 0.1895
150 : USD 0.1786
500 : USD 0.1363
3000 : USD 0.1303
6000 : USD 0.1266

1067
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 562
Multiples : 1
562 : USD 0.1748
1000 : USD 0.1692

1739
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 183
Multiples : 1
183 : USD 0.2227
500 : USD 0.187
1000 : USD 0.1772

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
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Taric
Typical Turn-On Delay Time
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We are delighted to provide the RTQ035N03TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTQ035N03TR and other electronic components in the MOSFETs category and beyond.

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RTQ035N03 Nch 30V 3.5A Small Signal MOSFET Datasheet llOutline SOT-457T V 30V DSS SC-95 R (Max.) 54m DS(on) TSMT6 I 3.5A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT6) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking QP llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 3.5 A D *1 I Pulsed drain current 15 A DP V Gate - Source voltage 12 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20170621 - Rev.003 Not Recommended for New Designs RTQ035N03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 3.5A - 38 54 GS D Static drain - source *4 R V = 4.0V, I = 3.5A - 40 56 m DS(on) GS D on - state resistance V = 2.5V, I = 3.5A - 55 77 GS D R Gate resistance f = 1MHz, open drain - 8.7 - G Forward Transfer *4 Y V = 10V, I = 3.5A 3.0 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20170621 - Rev.003 2017 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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