RTQ035P02FHATR ROHM

RTQ035P02FHA RTQ035P02 Transistor AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTQ035P02FHA RTQ035P02 z External dimensions (Unit : mm) z Structure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 z Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance.(80m at 2.5V) 2) High Power Package. 0~0.1 (1) (2) (3) 3) High speed switching. 1pin mark 4) Low voltage drive.(2.5V) 0.16 0.4 Each lead has same dimensions Abbreviated symbol : TL z Applications DC-DC converter z Packaging specifications z Equivalent circuit (6) (5) (4) Package Taping Code TR Type Basic ordering unit 3000 2 (pieces) RTQ035P02 RTQ035P02FHA 1 (1) Drain (2) Drain (3) Gate (1) (2) (3) (4) Source (5) Drain 1 ESD PROTECTION DIODE (6) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drainsource voltage VDSS 20 V Gatesource voltage VGSS 12 V 3.5 Continuous ID A Drain current 1 17.5 Pulsed IDP A Continuous IS 1 A Source current (Body diode) 1 Pulsed ISP 4 A 2 Total power dissipation PD 1.25 W Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle 1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 100 C / W Mounted on a ceramic board. Rev.A 1/4 1.6 2.8 0.3~0.6RTQ035P02FHA RTQ035P02 Transistor z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions IGSS 10 A VGS=12V, VDS=0V Gate-source leakage Drain-source breakdown voltage V(BR)DSS 20 V ID=1 , VmA, GS=0V IDSS 1 A VDS=20V, VGS=0V Zero gate voltage drain current mA Gate threshold voltage 0.7 2.0 V VDS=10V, ID=1 VGS(th) 50 65 m ID=3.5A, VGS=4.5V 55 70 m ID=3.5A, VGS=4V Static drain-source on-state RDS(on) resistance 80 100 m ID=1.75A, VGS=2.5V Foward transfer admittance Yfs 3.5 S VDS=10V, ID=3.5A Input capacitance Ciss 1200 pF VGS=0V VDS=10V, Output capacitance Coss 200 pF f=1MHz Reverse transfer capacitance Crss 130 pF Turn-on delay time td(on) 16 ns ID=2A Rise time tr 40 ns VDD 15V VGS=4.5V Turn-off delay time td(off) 55 ns RL=7.5 RG=10 Fall time tf 30 ns Total gate charge Qg 10.5 nC VDD 15V Gate-source charge Qgs 2.0 nC VGS=4.5V ID=3.5A Qgd 3.5 nC Gate-drain charge PULSED z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions VSD 1.2 V IS=1A, VGS=0V Forward voltage Rev.A 2/4