RTQ045N03FRARTQ045N03 Transistors AEC-Q101 Qualified 2.5V Drive Nch MOS FET RTQ045N03FRARTQ045N03 z External dimensions (Unit : mm) z Structure Silicon N-channel TSMT6 MOS FET 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) z Features 1) Low on-resistance. 0~0.1 (1) (2) (3) 2) Built-in G-S Protection Diode. 1pin mark 3) Small Surface Mount Package (TSMT6) . 0.16 0.4 Each lead has same dimensions Abbreviated symbol : QM z Application Power switching, DC / DC converter. z Packaging specifications z Equivalent circuit Package Taping (6) (5) (4) (6) (5) (4) Type Code TR Basic ordering unit (pieces) 3000 2 RTQ045N03 RTQ045N03FRA (1) (2) (3) 1 (1) Drain (2) Drain (1) (2) (3) (3) Gate z Absolute maximum ratings (Ta=25C) (4) Source (5) Drain Parameter Symbol Limits Unit 1 ESD PROTECTION DIODE (6) Drain 2 BODY DIODE Drain-source voltage VDSS 30 V A protection diode is included between the gate and Gate-source voltage VGSS 12 V the source terminals to protect the diode against static electricity when the product is in use. Use the protection Continuous ID 4.5 A Drain current circuit when the fixed voltages are exceeded. 1 Pulsed I 18 A DP Source current Continuous I 1.0 A S 1 (Body diode) Pulsed ISP 4.0 A 2 Total power dissipation PD 1.25 W Channel temperature Tch 150 C Storage temperature Tstg 55~+150 C 1 Pw10s, Duty cycle 1% 2 Mounted on a ceramic board. z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 100 C / W Mounted on a ceramic board. Rev.C 1/3 1.6 2.8 0.3~0.6RTQ045N03FRA RTQ045N03 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I 10 AV =12V, V =0V GSS GS DS Drain-source breakdown voltage V(BR) DSS 30 VID=1mA, VGS=0V Zero gate voltage drain current IDSS 1 AVDS=30V, VGS=0V Gate threshold voltage V 0.5 1.5 V V =10V, I =1mA GS (th) DS D 30 43 ID=4.5A, VGS=4.5V Static drain-source on-state RDS (on) 32 45 m ID=4.5A, VGS=4V resistance =4.5A, V =2.5V 42 60 ID GS Forward transfer admittance Yfs 4.5 SID=4.5A, VDS=10V Input capacitance Ciss 540 pF VDS=10V Output capacitance Coss 150 pF VGS=0V Reverse transfer capacitance Crss 100 pF f=1MHz td (on) Turn-on delay time 13 ns ID=2.25A, VDD 15V tr Rise time 31 ns VGS=4.5V t d (off) Turn-off delay time 45 ns RL=6.67 tf Fall time 30 ns R =10 G Qg Total gate charge 7.6 10.7 nC VDD 15V Q gs Gate-source charge 1.2 nC VGS=4.5V Qgd Gate-drain charge 2.7 nC I =4.5A D Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=4A, VGS=0V Pulsed Rev.C 2/3