X-On Electronics has gained recognition as a prominent supplier of RUF015N02TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RUF015N02TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RUF015N02TL ROHM

RUF015N02TL electronic component of ROHM
RUF015N02TL ROHM
RUF015N02TL MOSFETs
RUF015N02TL  Semiconductors

Images are for reference only
See Product Specifications
Part No. RUF015N02TL
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 20 V 1.5A (Ta) 800mW (Ta) Surface Mount TUMT3
Datasheet: RUF015N02TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1534 ea
Line Total: USD 460.2 
Availability - 32010
Ship by Mon. 05 May to Fri. 09 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
32010
Ship by Mon. 05 May to Fri. 09 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1534
6000 : USD 0.1463
9000 : USD 0.145
15000 : USD 0.1438
30000 : USD 0.1413

11192
Ship by Thu. 01 May to Mon. 05 May
MOQ : 1
Multiples : 1
1 : USD 0.57
10 : USD 0.4088
100 : USD 0.2622
250 : USD 0.2497
500 : USD 0.209
1000 : USD 0.1804
3000 : USD 0.1518
6000 : USD 0.1507
9000 : USD 0.1485

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the RUF015N02TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RUF015N02TL and other electronic components in the MOSFETs category and beyond.

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RUF015N02 Datasheet Nch 20V 1.5A Middle Power MOSFET llOutline SOT-323T V 20V DSS R (Max.) 180m DS(on) TUMT3 I 1.5A D P 0.8W D llInner circuit llFeatures 1) Low on - resistance. 2) Space saving small surface mount package (TUMT3). 3) Low voltage drive(1.8V drive) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking PS llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS I Continuous drain current 1.5 A D *1 I Pulsed drain current 3.0 A DP V Gate - Source voltage 10 V GSS *2 P 0.8 W D Power dissipation *3 P 0.75 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2015 ROHM Co., Ltd. All rights reserved. 20160112 - Rev.001 RUF015N02 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 156 /W thJA Thermal resistance, junction - ambient *3 R - - 167 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current I V = 10V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.3 - 1.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 1.5A - 130 180 GS D Static drain - source *4 R V = 2.5V, I = 1.5A - 170 240 m DS(on) GS D on - state resistance V = 1.8V, I = 0.8A - 220 310 GS D R Gate resistance f = 1MHz, open drain - 17 - G Forward Transfer *4 Y V = 10V, I = 1.5A 1.6 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (25x25x0.8mm) *4 Pulsed www.rohm.com 2/11 20160112 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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