1.8V Drive Nch MOSFET RUE003N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3 MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. (1)Source 4) Drive circuits can be simple. (2)Gate (3)Drain Abbreviated symbol : QT 5) Parallel use is easy. Applications Switching Packaging specifications Equivalent circuit Package Taping Drain Code TL Type Basic ordering unit 3000 (pieces) RUE003N02 Gate 2 1 Source 1 ESD PROTECTION DIODE 2 BODY DIODE Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS 8 V Continuous ID 300 mA Drain current 1 Pulsed IDP 600 mA 2 Total power dissipation PD 150 mW Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Each terminal mounted on a recommended land Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 833 C / W Each terminal mounted on a recommended land www.rohm.com 2011.05 - Rev.B 1/3 c 2011 ROHM Co., Ltd. All rights reserved. RUE003N02 Data Sheet Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Conditions Parameter Gate-source leakage IGSS 10 AVGS=8V, VDS=0V Drain-source breakdown voltage V(BR)DSS 20 V ID=1mA, VGS=0V Zero gate voltage drain current IDSS 1.0 A VDS=20V, VGS=0V Gate threshold voltage VGS(th) 0.3 1.0 V VDS=10V, ID=1mA 0.7 1.0 ID=300mA, VGS=4.0V Static drain-source on-state RDS(on) 0.8 1.2 ID=300mA, VGS=2.5V resistance 1.0 1.4 ID=300mA, VGS=1.8V Yfs 400 ms ID=300mA, VDS=10V Forward transfer admittance Input capacitance Ciss 25 pF VDS=10V Output capacitance Coss 10 pF VGS=0V Crss 10 pF Reverse transfer capacitance f=1MHz Turn-on delay time td(on) 5 ns ID=150mA, VDD 10V Rise time tr 10 ns VGS=4.0V Turn-off delay time td(off) 15 ns RL=67 Fall time tf 10 ns RG=10 Pulsed Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 100mA, VGS=0V Pulsed Electrical characteristic curves 1 10 10 VDS=10V VGS=4V VGS=2.5V Pulsed Pulsed Pulsed 0.1 Ta=125C Ta=125C 75C 75C 25C 25C 0.01 25C 25C Ta=125C 1 1 75C 0.001 25C 25C 0.0001 0.00001 0.1 0.1 0.0 0.5 1.0 1.5 0.01 0.1 1 0.01 0.1 1 GATE-SOURCE VOLTAGE : VGS (V) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.1 Typical transfer characteristics Fig.2 Static drain-source on-state Fig.3 Static drain-source on-state resistance vs. drain current () resistance vs. drain current () 10 1 100 VGS=1.8V VGS=0V Ta=25C Pulsed Pulsed f=1MHZ Ta=125C VGS=0V 75C 25C Ciss 25C Ta=125C 75C 25C 0.1 10 1 Coss 25C Crss 0.1 0.01 1 0.01 0.1 1 0.0 0.5 1 1.5 0.01 0.1 1 10 100 DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLTAGE : VDS (V) Fig.4 Static drain-source on-state Fig.6 Typical capacitance vs. Fig.5 Source current vs. resistance vs. drain current () drain-source voltage source-drain voltage www.rohm.com 2011.05 - Rev.B 2/3 c 2011 ROHM Co., Ltd. All rights reserved. STATIC DRAIN-SOURCE DRAIN CURRENT : ID (A) ON-STATE RESISTANCE : RDS(on) () STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () SOURCE CURRENT : IS (A) STATIC DRAIN-SOURCE CAPACITANCE : C (pF) ON-STATE RESISTANCE : RDS(on) ()
