X-On Electronics has gained recognition as a prominent supplier of RUL035N02FRATR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RUL035N02FRATR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RUL035N02FRATR ROHM

RUL035N02FRATR electronic component of ROHM
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See Product Specifications
Part No.RUL035N02FRATR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 20V Vds 3.5A 0.066Rds(on) 5.7Qg
Datasheet: RUL035N02FRATR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6226 ea
Line Total: USD 0.62 
Availability - 3302
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3302
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6226
10 : USD 0.4015
100 : USD 0.2695
500 : USD 0.2365
1000 : USD 0.2123
3000 : USD 0.176
9000 : USD 0.1595
24000 : USD 0.154

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RUL035N02FRATR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RUL035N02FRATR and other electronic components in the MOSFETs category and beyond.

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RUL035N02 FRA Nch 20V 3.5A Power MOSFET Datasheet Outline (6) V 20V DSS TUMT6 (5) (4) R (Max.) 43m DS(on) I 3.5A (1) D (2) (3) P 1.0W D Features Inner circuit 1) Low on - resistance. (1) Drain (2) Drain 2) 1.5V Drive. (3) Gate (4) Source 3) Built-in G-S Protection Diode. (5) Drain (6) Drain 4) Small Surface Mount Package (TUMT6). 1 ESD PROTECTION DIODE 2 BODY DIODE 5) Pb-free lead plating RoHS compliant 6) AEC-Q101 Qualified Packaging specifications Packaging Taping Reel size (mm) 180 Application Tape width (mm) 8 DC/DC converters Type 3,000 Quantity (pcs) Taping code TR Marking XD Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 20 V DSS *1 Continuous drain current I 3.5 A D *2 Pulsed drain current A I 7 D,pulse V Gate - Source voltage 10 V GSS *3 P 1.0 W D Power dissipation *4 0.32 W P D T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 1/11 2019.05 - Rev.CData Sheet RUL035N02FRA Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 125 C/W thJA Thermal resistance, junction - ambient *4 R - - 391 C/W thJA Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I =1mA Breakdown voltage (BR)DSS D - 20 - mV/C temperature coefficient T referenced to 25C j I V = 20V, V = 0V Zero gate voltage drain current - - 1 A DSS DS GS I Gate - Source leakage current V = 10V, V = 0V - - 10 A GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 0.3 - 1.0 V GS (th) DS D V I =1mA Gate threshold voltage (GS)th D - 1.9 - mV/C temperature coefficient T referenced to 25C j V =4.5V, I =3.5A - 31 43 GS D V =2.5V, I =3.5A - 38 53 GS D Static drain - source *5 V =1.8V, I =1.8A R - 50 70 m GS D DS(on) on - state resistance V =1.5V, I =0.7A - 66 93 GS D V =4.5V, I =3.5A, T =125C - 56 80 GS D j R Gate input resistannce f = 1MHz, open drain - 7.5 - G *5 V =10V, I =3.5A Transconductance g 3.2 8.5 - S DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10 s, Duty cycle 1% *3 Mounted on a seramic board (30300.8mm) *4 Mounted on a FR4 (15200.8mm) *5 Pulsed www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2/11 2019.05 - Rev.C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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