X-On Electronics has gained recognition as a prominent supplier of DMP1011LFV-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMP1011LFV-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMP1011LFV-7 Diodes Incorporated

DMP1011LFV-7 electronic component of Diodes Incorporated
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Part No.DMP1011LFV-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFETBVDSS: 8V-24V
Datasheet: DMP1011LFV-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.2581 ea
Line Total: USD 516.2 
Availability - 0
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
873
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.828
10 : USD 0.7303
100 : USD 0.498
500 : USD 0.4163
1000 : USD 0.3542
2000 : USD 0.3128

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMP1011LFV-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMP1011LFV-7 and other electronic components in the MOSFETs category and beyond.

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DMP1011LFV P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low R Ensures On-State Losses are Minimized DS(ON) I Max D BV R Max DSS DS(ON) Small Form Factor Thermally Efficient Package Enables Higher T = +25C C -19A Density End Products (PowerDI ) 11.7m V = -4.5V GS -12V 18.6m V = -2.5V -15A GS Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product Description ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This MOSFET is designed to minimize the on-state resistance Halogen and Antimony Free. Green Device (Note 3) (R ), yet maintain superior switching performance, making it DS(ON) Qualified to AEC-Q101 Standards for High Reliability ideal for high efficiency power management applications. Applications Mechanical Data Backlighting Case: PowerDI3333-8 (Type UX) Power Management Functions Case Material: Molded Plastic,Gree Molding Compound. DC-DC Converters UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072grams (Approximate) PowerDI3333-8 (Type UX) Bottom View Top View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP1011LFV-7 2,000/Tape & Reel PowerDI3333-8 (Type UX) DMP1011LFV-13 3,000/Tape & Reel PowerDI3333-8 (Type UX) Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP1011LFV Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -12 V DSS Gate-Source Voltage V - 6 V GSS TA = +25C -13 t<10s A I D -10 T = +70C A Continuous Drain Current (Note 6) V = 4.5V GS Steady T = +25C -19 C I A D State -15 T = +70C C Maximum Continuous Body Diode Forward Current (Note 6) I 3 A S Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) I 70 A DM Avalanche Current (Note 7) L = 0.3mH 24 A I AS Avalanche Energy (Note 7) L = 0.3mH 86 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.05 W P D Steady State 118 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 83.5 Total Power Dissipation (Note 6) 2.16 W P D Steady State 57 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 40.3 C/W Thermal Resistance, Junction to Case (Note 6) 11.7 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -12 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current (T = +25C) I -1 A V = -9.6V, V = 0V J DSS DS GS Gate-Source Leakage I -100 nA V = -6V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -0.6 -1.2 V VGS(TH) VDS = VGS, ID = -250A 9.8 11.7 V = -4.5V, I = -12A GS D Static Drain-Source On-Resistance RDS(ON) m 14.6 18.6 V = -2.5V, I = -9A GS D Diode Forward Voltage -0.8 -1.0 V V V = 0V, I = -16A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 913 C iss V = -6V, V = 0V, DS GS Output Capacitance 458 pF C oss f = 1.0MHz Reverse Transfer Capacitance C 53 rss Gate Resistance R 1.85 V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge (V = -6V) Q 9.5 GS g Total Gate Charge (V = -4.5V) Q 7.1 GS g nC V = -6V, I = -12A DS D Gate-Source Charge Q 1.4 gs Gate-Drain Charge 1.1 Q gd Turn-On Delay Time 6.3 t D(ON) Turn-On Rise Time 2.6 t V = -6V, V = -4.5V, R DS GS ns Turn-Off Delay Time 14.4 R = 1, R = 4.7, I =-12A t L g D D(OFF) Turn-Off Fall Time 3.9 t F Body Diode Reverse Recovery Time t 13.5 ns I = -12A, dI/dt = 100A/s RR F Body Diode Reverse Recovery Charge Q 2.5 nC I = -12A, dI/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 7 DMP1011LFV March 2017 Diodes Incorporated www.diodes.com Document Number: DS38880 Rev. 3 - 2 NEW PRODUCT ADVANCED INFORMATION ADVANCE INFORMATION ADVANCED INFORMATION

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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