IPD90N06S4-07 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 6.9 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low R DSon Type Package Marking IPD90N04S6-07 PG-TO252-3-11 4N0607 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C, V =10V Continuous drain current 90 A D C GS 2) 63 T =100C, V =10V C GS 1) I T =25C 360 Pulsed drain current D,pulse C 1) E I =45A 67 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 90 A AS Gate source voltage V - 20 V GS Power dissipation P T =25C 79 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2009-03-24 IPD90N06S4-07 Parameter Symbol Conditions Values Unit min. typ. max. 1) Thermal characteristics Thermal resistance, junction - case R - - - 1.9 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 2) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 60 - - V (BR)DSS GS D V V =V , I =40A Gate threshold voltage 2.0 3.0 4.0 GS(th) DS GS D V =60V, V =0V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25C j V =60V, V =0V, DS GS - 5 100 2) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =10V, I =90A Drain-source on-state resistance - 5.7 6.9 m DS(on) GS D Rev. 1.0 page 2 2009-03-24