RUQ050N02FRATR ROHM

AEC-Q101 Qualified 1.5V Drive Nch MOSFET RUQ050N02FRARUQ050N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive Applications Switching Each lead has same dimensions Abbreviated symbol : XG Packaging specifications Inner circuit Package Taping (6) (5) (4) Type Code TR Basic ordering unit (pieces) 3000 2 RUQ050N02FRARUQ050N02 1 (1) Drain (2) Drain (3) Gate (1) (2) (3) (4) Source (5) Drain 1 ESD PROTECTION DIODE (6) Drain 2 BODY DIODE Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage V 20 V DSS Gate-source voltage VGSS 10 V Continuous ID 5.0 A Drain current 1 Pulsed I 10 A DP Source current Continuous IS 1.0 A (Body diode) 1 Pulsed ISP 10 A 2 Total power dissipation P 1.25 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw 10s, Duty cycle 1% 2 Mounted on a ceramic board Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 100 C/W Mounted on a ceramic board www.rohm.com 1/4 2010.08 - Rev.A c 2010 ROHM Co., Ltd. All rights reserved. RUQ050N02FRA Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=10V, VDS=0V Drain-source breakdown voltage V(BR) DSS 20 VID= 1mA, VGS=0V Zero gate voltage drain current I 1 AV = 20V, V =0V DSS DS GS Gate threshold voltage VGS (th) 0.3 1.0 V VDS= 10V, ID= 1mA 22 30 m ID= 5.0A, VGS= 4.5V Static drain-source on-state 27 38 m I = 5.0A, V = 2.5V D GS RDS (on) resistance 32 45 m ID= 2.5A, VGS= 1.8V 40 80 m ID= 1.0A, VGS= 1.5V Forward transfer admittance Y 6.5 SV = 10V, I = 5.0A fs DS D Input capacitance Ciss 900 pF VDS= 10V Output capacitance Coss 190 pF VGS=0V C 120 pF f=1MHz Reverse transfer capacitance rss Turn-on delay time td (on) 15 ns VDD 10V ID= 2.5A Rise time tr 25 ns VGS= 4.5V Turn-off delay time td (off) 70 ns RL 4 Fall time tf 100 ns RG=10 Total gate charge Qg 12 nC VDD 10V, ID= 5.0A V = 4.5V Gate-source charge Qgs 2.5 nC GS RL 2, RG=10 Gate-drain charge Qgd1.7 nC Pulsed Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I = 1.0A, V =0V S GS Pulsed www.rohm.com 2010.08 - Rev .A 2/4 c 2010 ROHM Co., Ltd. All rights reserved.