X-On Electronics has gained recognition as a prominent supplier of RUR040N02TL MOSFET across the USA, India, Europe, Australia, and various other global locations. RUR040N02TL MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RUR040N02TL ROHM

Hot RUR040N02TL electronic component of ROHM
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See Product Specifications
Part No.RUR040N02TL
Manufacturer: ROHM
Category: MOSFET
Description: MOSFET Med Pwr, Sw MOSFET N Chan, 20V, 4A
Datasheet: RUR040N02TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2971 ea
Line Total: USD 0.3

Availability - 1
Ship by Fri. 16 Aug to Wed. 21 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Fri. 16 Aug to Wed. 21 Aug
MOQ : 1
Multiples : 1
1 : USD 0.2971
10 : USD 0.2419
30 : USD 0.2183
100 : USD 0.1887
500 : USD 0.1756
1000 : USD 0.1676

11393
Ship by Thu. 15 Aug to Mon. 19 Aug
MOQ : 1
Multiples : 1
1 : USD 0.6313
10 : USD 0.552
100 : USD 0.391
500 : USD 0.3358
1000 : USD 0.2933
3000 : USD 0.2587
6000 : USD 0.2587
9000 : USD 0.2507
24000 : USD 0.2484

4055
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ : 253
Multiples : 253
253 : USD 0.4035
500 : USD 0.389
1000 : USD 0.3762
2500 : USD 0.365

4055
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ : 253
Multiples : 253
253 : USD 0.4035
500 : USD 0.389
1000 : USD 0.3762
2500 : USD 0.365

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the RUR040N02TL from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RUR040N02TL and other electronic components in the MOSFET category and beyond.

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RUR040N02 Datasheet Nch 20V 4A Small Signal MOSFET llOutline SOT-346T V 20V DSS SC-96 R (Max.) 35m DS(on) TSMT3 I 4.0A D P 1.0W D llInner circuit llFeatures 1) 1.5V drive 2) Low on-resistance 3) Built-in G-S protection diode 4) Small surface mount package(TSMT3) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking XF llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS I Continuous drain current 4.0 A D *1 I Pulsed drain current 8.0 A DP V Gate - Source voltage 10 V GSS *2 P 1.0 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2018 ROHM Co., Ltd. All rights reserved. 20180702 - Rev.002 RUR040N02 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 10V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.3 - 1.3 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 4.0A - 25 35 GS D V = 2.5V, I = 4.0A - 33 46 GS D Static drain - source *4 R m DS(on) on - state resistance V = 1.8V, I = 2.0A - 42 59 GS D V = 1.5V, I = 0.8A - 55 110 GS D R Gate resistance f = 1MHz, open drain - 6.9 - G Forward Transfer *4 Y V = 10V, I = 4.0A 5.0 - - S fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (25x25x0.8mm) *4 Pulsed www.rohm.com 2/11 20180702 - Rev.002 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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