X-On Electronics has gained recognition as a prominent supplier of RUR040N02TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RUR040N02TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RUR040N02TL ROHM

Hot RUR040N02TL electronic component of ROHM
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See Product Specifications
Part No.RUR040N02TL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Med Pwr, Sw MOSFET N Chan, 20V, 4A
Datasheet: RUR040N02TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3024 ea
Line Total: USD 0.3 
Availability - 17
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
17
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 0.3024
10 : USD 0.2463
30 : USD 0.2222
100 : USD 0.1921
500 : USD 0.1787
1000 : USD 0.1708

5937
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.781
10 : USD 0.5819
100 : USD 0.396
500 : USD 0.3168
1000 : USD 0.2915
3000 : USD 0.2486
6000 : USD 0.2475
9000 : USD 0.2376

3890
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 202
Multiples : 1
202 : USD 0.7058

41116
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 43
Multiples : 1
43 : USD 0.949
53 : USD 0.7768
100 : USD 0.5607
200 : USD 0.559
500 : USD 0.4095
1000 : USD 0.3705
3000 : USD 0.3397
6000 : USD 0.312
12000 : USD 0.299
24000 : USD 0.2812

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RUR040N02TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RUR040N02TL and other electronic components in the MOSFETs category and beyond.

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RUR040N02 Datasheet Nch 20V 4A Small Signal MOSFET llOutline SOT-346T V 20V DSS SC-96 R (Max.) 35m DS(on) TSMT3 I 4.0A D P 1.0W D llInner circuit llFeatures 1) 1.5V drive 2) Low on-resistance 3) Built-in G-S protection diode 4) Small surface mount package(TSMT3) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking XF llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS I Continuous drain current 4.0 A D *1 I Pulsed drain current 8.0 A DP V Gate - Source voltage 10 V GSS *2 P 1.0 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2018 ROHM Co., Ltd. All rights reserved. 20180702 - Rev.002 RUR040N02 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 10V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.3 - 1.3 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 4.0A - 25 35 GS D V = 2.5V, I = 4.0A - 33 46 GS D Static drain - source *4 R m DS(on) on - state resistance V = 1.8V, I = 2.0A - 42 59 GS D V = 1.5V, I = 0.8A - 55 110 GS D R Gate resistance f = 1MHz, open drain - 6.9 - G Forward Transfer *4 Y V = 10V, I = 4.0A 5.0 - - S fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (25x25x0.8mm) *4 Pulsed www.rohm.com 2/11 20180702 - Rev.002 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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