X-On Electronics has gained recognition as a prominent supplier of RW1A030APT2CR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RW1A030APT2CR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RW1A030APT2CR ROHM

RW1A030APT2CR electronic component of ROHM
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Part No.RW1A030APT2CR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET Trans MOSFET P-CH 12V 3A
Datasheet: RW1A030APT2CR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.6057
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.6057
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.6563
10 : USD 0.5368
100 : USD 0.2885
500 : USD 0.2201
1000 : USD 0.1711
2500 : USD 0.1589
8000 : USD 0.1375
N/A

Obsolete
0
MOQ : 260
Multiples : 1
260 : USD 0.3721
N/A

Obsolete
0
MOQ : 239
Multiples : 239
239 : USD 0.3047
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the RW1A030APT2CR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RW1A030APT2CR and other electronic components in the MOSFETs category and beyond.

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RW1A030AP Datasheet Pch -12V -3A Small Signal MOSFET llOutline SOT-563T V -12V DSS WEMT6 R (Max.) 42m DS(on) I 3A D P 0.7W D llInner circuit llFeatures 1) Low on - resistance. 2) Small high power package 3) Low voltage drive(1.5V) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 8000 Taping code T2CR Marking SB llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -12 V DSS I Continuous drain current 3 A D *1 I Pulsed drain current 12 A DP V Gate - Source voltage 0 -8 V GSS *2 P 0.7 W D Power dissipation *3 P 0.4 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160808 - Rev.001 Not Recommended for New Designs RW1A030AP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 179 /W thJA Thermal resistance, junction - ambient *3 R - - 313 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -5.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -10 A DSS DS GS drain current I Gate - Source leakage current V = -8V, V = 0V - - -10 A GSS GS DS Gate threshold voltage V V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.7 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -3A - 30 42 GS D V = -2.5V, I = -1.5A - 40 56 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -1.5A - 55 82 GS D V = -1.5V, I = -0.6A - 75 150 GS D Gate resistance R f = 1MHz, open drain - 18 - G Forward Transfer *4 Y V = -6V, I = -3A 3.8 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) 2 *3 Mounted on a FR4 (12200.8mm,Cu pad:240mm ) *4 Pulsed www.rohm.com 2/11 20160808 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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