X-On Electronics has gained recognition as a prominent supplier of RW1C025ZPT2CR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RW1C025ZPT2CR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RW1C025ZPT2CR ROHM

RW1C025ZPT2CR electronic component of ROHM
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See Product Specifications
Part No.RW1C025ZPT2CR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET Trans MOSFET P-CH 20V 2.5A
Datasheet: RW1C025ZPT2CR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 8000
Multiples : 8000
8000 : USD 0.1339
16000 : USD 0.1253
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.5438
10 : USD 0.4218
100 : USD 0.2871
500 : USD 0.2153
1000 : USD 0.1615
2000 : USD 0.148
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.5359
10 : USD 0.4563
100 : USD 0.3313
500 : USD 0.2487
1000 : USD 0.195
2500 : USD 0.1716
5000 : USD 0.162
8000 : USD 0.1536
N/A

Obsolete
0
MOQ : 90
Multiples : 1
90 : USD 0.4294
100 : USD 0.3914
200 : USD 0.3646
500 : USD 0.2461
1000 : USD 0.2362
N/A

Obsolete
0
MOQ : 93
Multiples : 1
93 : USD 0.4033
100 : USD 0.371
200 : USD 0.351
500 : USD 0.2128
1000 : USD 0.2042
2000 : USD 0.1986
N/A

Obsolete
0
MOQ : 182
Multiples : 182
182 : USD 0.0805
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
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Rds On - Drain-Source Resistance
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We are delighted to provide the RW1C025ZPT2CR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RW1C025ZPT2CR and other electronic components in the MOSFETs category and beyond.

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RW1C025ZP Datasheet Pch -20V -2.5A Small Signal MOSFET llOutline SOT-563T V -20V DSS WEMT6 R (Max.) 65m DS(on) I 2.5A D P 0.7W D llInner circuit llFeatures 1) Low on - resistance. 2) Small high power package 3) Low voltage drive(1.5V) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 8000 Taping code T2CR Marking ZG llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -20 V DSS I Continuous drain current 2.5 A D *1 I Pulsed drain current 10 A DP V Gate - Source voltage 10 V GSS *2 P 0.7 W D Power dissipation *3 P 0.4 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160825 - Rev.001 Not Recommended for New Designs RW1C025ZP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 179 /W thJA Thermal resistance, junction - ambient *3 R - - 292 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 10V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = -10V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -2.5A - 48 65 GS D V = -2.5V, I = -1.2A - 65 90 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -1.2A - 90 135 GS D V = -1.5V, I = -0.5A - 120 240 GS D Gate resistance R f = 1MHz, open drain - 19.3 - G Forward Transfer *4 Y V = -10V, I = -2.5A 2.2 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) 2 *3 Mounted on a FR4 (12200.8mm,Cu pad:240mm ) *4 Pulsed www.rohm.com 2/11 20160825 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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