X-On Electronics has gained recognition as a prominent supplier of RW1E015RPT2R MOSFETs across the USA, India, Europe, Australia, and various other global locations. RW1E015RPT2R MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RW1E015RPT2R ROHM

RW1E015RPT2R electronic component of ROHM
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See Product Specifications
Part No.RW1E015RPT2R
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 4V Drive Pch MOSFET Drive Pch
Datasheet: RW1E015RPT2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.363 ea
Line Total: USD 0.36 
Availability - 26141
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
26141
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.363
10 : USD 0.2992
100 : USD 0.2035
1000 : USD 0.1221
2500 : USD 0.1144
8000 : USD 0.1012
24000 : USD 0.0979
48000 : USD 0.0957
96000 : USD 0.0935

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Configuration
Height
Length
Product
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RW1E015RPT2R from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RW1E015RPT2R and other electronic components in the MOSFETs category and beyond.

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RW1E015RP Datasheet Pch -30V -1.5A Small Signal MOSFET llOutline SOT-563T V -30V DSS WEMT6 R (Max.) 160m DS(on) I 1.5A D P 0.7W D llInner circuit llFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (WEMT6). 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 8000 Taping code T2R Marking UJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS I Continuous drain current 1.5 A D *1 I Pulsed drain current 6 A DP V Gate - Source voltage 20 V GSS *2 P 0.7 W D Power dissipation *3 P 0.4 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160706 - Rev.001 Not Recommended for New Designs RW1E015RP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 179 /W thJA Thermal resistance, junction - ambient *3 R - - 292 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -24.1 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -1.5A - 115 160 GS D V = -4.5V, I = -0.7A - 170 240 GS D Static drain - source *4 R V = -4V, I = -0.7A - 190 270 m DS(on) GS D on - state resistance V = -10V, I = -1.5A GS D - 175 250 T = 125 j R Gate resistance f = 1MHz, open drain - 25 - G Forward Transfer *4 Y V = -10V, I = -1.5A 1.2 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) 2 *3 Mounted on a FR4 (12200.8mm,Cu pad:240mm ) *4 Pulsed www.rohm.com 2/11 20160706 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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