X-On Electronics has gained recognition as a prominent supplier of RZF013P01TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RZF013P01TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RZF013P01TL ROHM

RZF013P01TL electronic component of ROHM
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See Product Specifications
Part No.RZF013P01TL
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: RZF013P01TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3979 ea
Line Total: USD 0.4 
Availability - 4441
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 5
Multiples : 5
5 : USD 0.2701
50 : USD 0.22
150 : USD 0.1986
500 : USD 0.1717
3000 : USD 0.1597
6000 : USD 0.1526

4441
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3979
10 : USD 0.2691
100 : USD 0.1472
1000 : USD 0.1345
3000 : USD 0.1069
9000 : USD 0.1046
24000 : USD 0.1012

499
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 459
Multiples : 1
459 : USD 0.3708

20730
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 214
Multiples : 1
214 : USD 0.1902
500 : USD 0.1804
1000 : USD 0.1435
3000 : USD 0.1201
6000 : USD 0.1145

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Transistor Type
Brand
Configuration
Height
Length
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RZF013P01TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RZF013P01TL and other electronic components in the MOSFETs category and beyond.

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RZF013P01 Datasheet Pch 12V 1.3A Small Signal MOSFET llOutline SOT-323T V -12V DSS TUMT3 R (Max.) 260m DS(on) I 1.3A D P 0.8W D llInner circuit llFeatures 1) Low On-resistance 2) High power package 3) Low voltage drive(1.5V) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Quantity (pcs) 3000 Taping code TL Marking XC llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -12 V DSS I Continuous drain current 1.3 A D *1 I Pulsed drain current 5.2 A DP V Gate - Source voltage 10 V GSS *2 P 0.8 W D Power dissipation *3 P 0.75 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.002 RZF013P01 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 156 /W thJA Thermal resistance, junction - ambient *3 R - - 167 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 10V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -1.3A - 190 260 GS D V = -2.5V, I = -0.6A - 280 390 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -0.6A - 400 600 GS D V = -1.5V, I = -0.2A - 530 1060 GS D Gate resistance R f = 1MHz, open drain - 29 - G Forward Transfer *4 Y V = -6V, I = -1.3A 1.4 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) 2 *3 Mounted on a FR4 (25x25x0.8mm,Cu pad:625mm ) *4 Pulsed www.rohm.com 2/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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