SCH1337-TL-H ON Semiconductor

LOT No. LOT No. Ordering number : ENA1867C SCH1337 P-Channel Power MOSFET SCH1337 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V I =--1mA, V =0V --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--30V, V =0V --1 A DSS DS GS Gate to Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--1A 1.9 S DS D R (on)1 I =--1A, V =--10V 115 150 m DS D GS Static Drain to Source On-State Resistance R (on)2 I =--0.5A, V =--4.5V 182 255 m DS D GS R (on)3 I =--0.5A, V =--4V 208 292 m DS D GS Input Capacitance Ciss 172 pF Output Capacitance Coss V =--10V, f=1MHz 51 pF DS Reverse Transfer Capacitance Crss 36 pF Turn-ON Delay Time t (on) 4.5 ns d Rise Time t 4.2 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 20 ns d Fall Time t 10.6 ns f Total Gate Charge Qg 3.9 nC Gate to Source Charge Qgs V =--15V, V =--10V, I =--2A 0.6 nC DS GS D Gate to Drain Miller Charge Qgd 0.8 nC Diode Forward Voltage V I =--2A, V =0V --0.86 --1.5 V SD S GS Switching Time Test Circuit V V = --15V DD IN 0V --10V I = --1A D V IN R =15 L D V OUT PW=10s D.C.1% G SCH1337 P.G 50 S Ordering Information Device Package Shipping memo SCH1337-TL-H SCH6 5,000pcs./reel Pb-Free and Halogen Free No. A1867-2/6