LOTNo. LOTNo. SCH1430 Power MOSFET 20V, 125m , 2A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to www.onsemi.com minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features V R (on) Max I DSS DS D Max Low On-Resistance 125m 4.5V 1.8V drive 190m 2.5V 20V 2A ESD Diode-Protected Gate 310m 1.8V Pb-Free, Halogen Free and RoHS compliance Ultra small package SCH6 (1.6mm1.6mm0.56mmt) ELECTRICAL CONNECTION Typical Applications N-Channel Load Switch 1,2,5,6 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter SymbolValue Unit 1:Drain 2:Drain Drain to Source Voltage V 20V DSS 3 3:Gate Gate to Source Voltage V 12 V 4:Source GSS 5:Drain Drain Current (DC) I 2A D 6:Drain Drain Current (Pulse) 4 I 8 A DP PW 10s, duty cycle 1% Power Dissipation PACKING TYPE : TL MARKING When mounted on ceramic substrate P 0.8 W D 2 (900mm 0.8mm) Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C ZF Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not TL be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS ORDERING INFORMATION Parameter SymbolValue Unit See detailed ordering and shipping information on page 5 of this data sheet. Junction to Ambient R 156.2 C/W When mounted on ceramic substrate JA 2 (900mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : August 2015 - Rev. 2 SCH1430/D SCH1430 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 20 V BR DSS D GS Zero-Gate Voltage Drain Current I V =20V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I=1mA 0.4 1.3V GS DS D Forward Transconductance g V =10V, I=1A 1.9 S FS DS D R (on)1 I =1A, V=4.5V 93 125m DS D GS Static Drain to Source On-State 135 190 R (on)2 I =0.5A, V =2.5V m DS D GS Resistance R (on)3 I =0.3A, V =1.8V 200 310 m DS D GS Input Capacitance Ciss 128 pF Output Capacitance Coss 28 pF V =10V, f=1MHz DS Reverse Transfer Capacitance Crss 21 pF Turn-ON Delay Time t (on) 5.1 ns d Rise Time t 11 ns r See specified Test Circuit Turn-OFF Delay Time 14.5 ns t (off) d Fall Time 12 ns t f Total Gate Charge Qg 1.8 nC Gate to Source Charge Qgs 0.3 nC V =10V, V =4.5V, I =2A DS GS D Gate to Drain Miller Charge Qgd 0.55 nC Forward Diode Voltage V SD I =2A, V=0V 0.85 1.2V S GS Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =10V DD IN 4.5V 0V I =1A D V IN R =10 L V D OUT PW=10s D.C.1% G SCH1430 P.G 50 S www.onsemi.com 2