SCT2H12NZGC11 ROHM

SCT2H12NZ N-channel SiC power MOSFET Data Sheet lOutline TO-3PFM V 1700V DSS R (Typ.) 1.15W DS(on) I 3.7A D (3) P 35W D (2) (1) lInner circuit lFeatures (1) Gate 1) Low on-resistance (2) Drain 2) Fast switching speed (3) Source 3) Long creepage distance *1 Body Diode 4) Simple to drive 5) Pb-free lead plating RoHS compliant lPackaging specifications Packaging Tube Reel size (mm) - lApplication Tape width (mm) - Auxilialy power supplies Type Basic ordering unit (pcs) 30 Switch mode power supplies Taping code - Marking SCT2H12NZ lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Value Unit V Drain - Source voltage 1700 V DSS *1 T = 25C I 3.7 A c D Continuous drain current *1 T = 100C 2.6 A I c D *2 Pulsed drain current I 9.2 A D,pulse V Gate - Source voltage (DC) -6 to 22 V GSS *3 Gate - Source surge voltage (T 300nsec) V -10 to 26 V surge GSS-surge Power dissipation (T = 25C) P 35 W c D Junction temperature T 175 C j T Range of storage temperature -55 to +175 C stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.12 - Rev.A 1/13Data Sheet SCT2H12NZ lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 3.32 4.32 C/W thJC R Thermal resistance, junction - ambient - 36.8 50 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 1700 - - V (BR)DSS GS D voltage V = 1700V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 10 A DSS j drain current T = 150C - 0.2 - j I V = +22V, V = 0V Gate - Source leakage current - - 100 nA GSS+ GS DS Gate - Source leakage current I V = -6V, V = 0V - - nA -100 GSS- GS DS V V = V , I = 0.9mA Gate threshold voltage 1.6 2.8 4.0 V GS (th) DS GS D *1 Limited only by maximum temperature allowed. *2 PW 10s, Duty cycle 1% *3 Example of acceptable Vgs waveform *4 Pulsed www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.12 - Rev.A 2/13