X-On Electronics has gained recognition as a prominent supplier of SCT3030ALGC11 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT3030ALGC11 SiC MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

SCT3030ALGC11 ROHM

SCT3030ALGC11 electronic component of ROHM
SCT3030ALGC11 ROHM
SCT3030ALGC11 SiC MOSFETs
SCT3030ALGC11  Semiconductors

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See Product Specifications
Part No. SCT3030ALGC11
Manufacturer: ROHM
Category: SiC MOSFETs
Description: SiC MOSFETs N-Ch 650V SiC 70A 30mOhm TrenchMOS
Datasheet: SCT3030ALGC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 21.967 ea
Line Total: USD 21.97 
Availability - 6
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 21.967
10 : USD 21.967
25 : USD 21.12

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Package / Case
Packaging
Series
Technology
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SCT3030ALGC11 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT3030ALGC11 and other electronic components in the SiC MOSFETs category and beyond.

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SCT3030AL N-channel SiC power MOSFET Datasheet lOutline TO-247N V 650V DSS R (Typ.) 30m W DS(on) I 70A D (3) P 262W (2) D (1) lInner circuit lFeatures (1) Gate 1) Low on-resistance (2) Drain 2) Fast switching speed (3) Source 3) Fast reverse recovery *1 Body Diode 4) Easy to parallel 5) Simple to drive lPackaging specifications 6) Pb-free lead plating RoHS compliant Packing Tube Reel size (mm) - Tape width (mm) - lApplication Type Basic ordering unit (pcs) 30 Solar inverters Taping code C11 DC/DC converters Marking SCT3030AL Switch mode power supplies Induction heating Motor drives lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 650 V DSS *1 T = 25C 70 A I c D Continuous drain current *1 T = 100C I 49 A c D *2 Pulsed drain current I 175 A D,pulse V Gate - Source voltage (DC) -4 to +22 V GSS *3 Gate-Source Surge Voltage (t < 300nsec) V -4 to +26 V surge GSS surge *4 Recommended Drive Voltage 0 / +18 V V GS op Junction temperature T 175 C j Range of storage temperature T C -55 to +175 stg www.rohm.com TSQ50211-SCT3030AL 2018 ROHM Co., Ltd. All rights reserved. 1/12 14.Jun.2018 - Rev.005 TSZ2211114001SCT3030AL Datasheet lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 0.44 0.57 C/W thJC lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 650 - - V (BR)DSS GS D voltage V = 650V, V = 0V DS GS Zero gate voltage I T = 25C - 1 10 mA DSS j drain current T = 150C - 2 - j I Gate - Source leakage current V = +22V, V = 0V - - 100 nA GSS + GS DS Gate - Source leakage current I V = -4V, V = 0V - - -100 nA GSS - GS DS V V = 10V, I = 13.3mA Gate threshold voltage 2.7 - 5.6 V GS (th) DS D V = 18V, I = 27A GS D Static drain - source *5 T = 25C - 30 39 R m W j DS(on) on - state resistance T = 125C - 39.6 - j Gate input resistance R f = 1MHz, open drain - 7 - W G www.rohm.com TSQ50211-SCT3030AL 2018 ROHM Co., Ltd. All rights reserved. 2/12 14.Jun.2018 - Rev.005 TSZ2211115001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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