X-On Electronics has gained recognition as a prominent supplier of SCT2120AFC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT2120AFC MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SCT2120AFC ROHM

SCT2120AFC electronic component of ROHM
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See Product Specifications
Part No.SCT2120AFC
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 650 V 29A (Tc) 165W (Tc) Through Hole TO-220AB
Datasheet: SCT2120AFC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 24.57
10 : USD 21.7695
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0
MOQ : 30
Multiples : 30
30 : USD 9.3619
90 : USD 8.9875
120 : USD 8.9875
300 : USD 8.9875
450 : USD 8.9875
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Obsolete
0
MOQ : 1000
Multiples : 1000
1000 : USD 9.1827
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0
MOQ : 1
Multiples : 1
1 : USD 15.0661
10 : USD 13.2934
100 : USD 11.232
500 : USD 9.9729
1000 : USD 9.3711
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Obsolete
0
MOQ : 4
Multiples : 1
4 : USD 11.4197
10 : USD 9.0085
50 : USD 8.2649
100 : USD 7.8249
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0
MOQ : 3
Multiples : 1
3 : USD 17.1036
10 : USD 13.8883
25 : USD 13.4135
100 : USD 11.8401
500 : USD 11.6524
N/A

Obsolete
0
MOQ : 3
Multiples : 1
3 : USD 15.158
10 : USD 12.2705
25 : USD 11.8511
100 : USD 10.8793
500 : USD 10.7069
N/A

Obsolete
0
MOQ : 3
Multiples : 1
3 : USD 17.1036
10 : USD 13.8883
25 : USD 13.4135
100 : USD 11.8401
500 : USD 11.6524
N/A

Obsolete
0
MOQ : 3
Multiples : 1
3 : USD 15.158
10 : USD 12.2705
25 : USD 11.8511
100 : USD 10.8793
500 : USD 10.7069
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the SCT2120AFC from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT2120AFC and other electronic components in the MOSFETs category and beyond.

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SCT2120AF Datasheet N-channel SiC power MOSFET lOutline TO220AB V 650V DSS R (Typ.) 120m DS(on) I 29A D P 165W D (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance (1) Gate 2) Fast switching speed (2) Drain 3) Fast reverse recovery (3) Source 4) Easy to parallel *1 Body Diode 5) Simple to drive 6) Pb-free lead plating RoHS compliant lPackaging specifications Packing Tube Reel size (mm) - lApplication Tape width (mm) - Solar inverters Type Basic ordering unit (pcs) 50 DC/DC converters Packing code C Switch mode power supplies Marking SCT2120AF Induction heating Motor drives lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 650 V DSS *1 T = 25C I 29 A c D Continuous drain current *1 T = 100C 20 A I c D *2 Pulsed drain current I 72 A D,pulse Gate - Source voltage (DC) V V -6 to 22 GSS *3 Gate - Source surge voltage (t 300nsec) V -10 to 26 V surge GSS-surge Power dissipation (T = 25C) P 165 W c D Junction temperature T 175 C j T Range of storage temperature -55 to +175 C stg www.rohm.com TSQ50222-SCT2120AF 2019 ROHM Co., Ltd. All rights reserved. 1/12 22.Feb.2019 - Rev.003 TSZ2211114001Datasheet SCT2120AF lElectrical characteristics (T = 25 C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 650 - - V (BR)DSS GS D voltage V = 650V, V = 0V DS GS Zero gate voltage I T = 25C - 1 10 A DSS j drain current T = 150C - 2 - j I Gate - Source leakage current V = +22V, V = 0V - - 100 nA GSS+ GS DS I V = -6V, V = 0V Gate - Source leakage current - - -100 nA GSS- GS DS Gate threshold voltage V V = V , I = 3.3mA 1.6 2.8 4.0 V GS (th) DS GS D lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 0.70 0.91 C/W thJC T Soldering temperature, wavesoldering for 10s - - 265 C sold lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R C 9.61E-02 1.55E-03 th1 th1 R C 4.04E-01 K/W 5.23E-03 Ws/K th2 th2 R C 1.96E-01 8.33E-02 th3 th3 www.rohm.com TSQ50222-SCT2120AF 2019 ROHM Co., Ltd. All rights reserved. 2/12 22.Feb.2019 - Rev.003 TSZ2211115001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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