X-On Electronics has gained recognition as a prominent supplier of BTS247ZE3062AATMA2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BTS247ZE3062AATMA2 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BTS247ZE3062AATMA2 Infineon

BTS247ZE3062AATMA2 electronic component of Infineon
BTS247ZE3062AATMA2 Infineon
BTS247ZE3062AATMA2 MOSFETs
BTS247ZE3062AATMA2  Semiconductors

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See Product Specifications
Part No. BTS247ZE3062AATMA2
Manufacturer: Infineon
Category: MOSFETs
Description: Infineon Technologies MOSFET N-Ch 55V 19A D2PAK-4
Datasheet: BTS247ZE3062AATMA2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 4.273 ea
Line Total: USD 4273 
Availability - 970
Ship by Fri. 18 Apr to Thu. 24 Apr
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
7760
Ship by Fri. 18 Apr to Thu. 24 Apr
MOQ : 112
Multiples : 1
112 : USD 4.1875
500 : USD 4.0156
1000 : USD 3.7813

970
Ship by Fri. 18 Apr to Thu. 24 Apr
MOQ : 1000
Multiples : 1000
1000 : USD 4.273
2000 : USD 4.0026
3000 : USD 3.8522
5000 : USD 3.668
10000 : USD 3.5395
20000 : USD 3.4429

1164
Ship by Fri. 18 Apr to Thu. 24 Apr
MOQ : 112
Multiples : 1
112 : USD 4.1875
500 : USD 4.0156
1000 : USD 3.7813

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BTS247ZE3062AATMA2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BTS247ZE3062AATMA2 and other electronic components in the MOSFETs category and beyond.

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Speed TEMPFET BTS247Z Speed TEMPFET N-Channel Enhancement mode 1 Logic Level Input Analog driving possible 5 PG-TO263-5-2 Fast switching up to 1 MHz Potential-free temperature sensor with thyristor characteristics Overtemperature protection Green Product (RoHS Compliant) Avalanche rated AEC Qualified V Type Package R DS DS(on) BTS247Z E3062A PG-TO263-5-2 55 V 18 m D Pin 3 and TAB G Pin 1 A Pin 2 Temperature Sensor K Pin 4 S Pin 5 Pin Symbol Function 1 G Gate 2 A Anode Temperature Sensor 3 D Drain 4 K Cathode Temperature Sensor 5 S Source Data Sheet 1 Rev.1.4, 2013-07-26 Speed TEMPFET BTS247Z Maximum Ratings Parameter Symbol Value Unit Drain source voltage V 55 V DS V 55 Drain-gate voltage, R = 20 k GS DGR Gate source voltage V 20 GS Nominal load current (ISO 10483) A I D(ISO) V = 4.5 V, V 0.5 V, T = 85 C 12 GS DS C V = 10 V, V 0.5 V, T = 85 C 19 GS DS C 1) 33 Continuous drain current I D T = 100 C, V = 4.5V C GS Pulsed drain current 180 I D puls Avalanche energy, single pulse 1.3 J E AS I = 12 A, R = 25 D GS 120 W Power dissipation P tot T = 25 C C 2) Operating temperature T -40 ...+175 C j Peak temperature ( single event ) 200 T jpeak Storage temperature -55 ... +150 T stg DIN humidity category, DIN 40 040 E IEC climatic category DIN IEC 68-1 40/150/56 1 current limited by bond wire 2 Note: Thermal trip temperature of temperature sensor is below 175C Data Sheet 2 Rev.1.4, 2013-07-26

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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