X-On Electronics has gained recognition as a prominent supplier of BTS121AE3045ANTMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BTS121AE3045ANTMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BTS121AE3045ANTMA1 Infineon

BTS121AE3045ANTMA1 electronic component of Infineon
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Part No.BTS121AE3045ANTMA1
Manufacturer: Infineon
Category: MOSFETs
Description: Trans MOSFET N-CH 100V 22A 3-Pin(2+Tab) TO-220AB SMD T/R
Datasheet: BTS121AE3045ANTMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 7.0027 ea
Line Total: USD 7002.7 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 7.0027

   
Manufacturer
Product Category
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Gate-Source Voltage Max
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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We are delighted to provide the BTS121AE3045ANTMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BTS121AE3045ANTMA1 and other electronic components in the MOSFETs category and beyond.

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TEMPFET BTS 121 A Features N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic 3 The drain pin is electrically shorted to the tab 2 1 Pin 1 2 3 GD S Type V I R Package Ordering Code DS D DS(on) BTS 121A 100 V 22 A 0.1 TO-220AB C67078-S5010-A2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage V 100 V DS Drain-gate voltage, R = 20 k V 100 GS DGR Gate-source voltage V 10 GS Continuous drain current, T = 25 C I 22 A C D ISO drain current I 3.5 D-ISO T = 85 C, V = 10 V, V = 0.5 V C DS DS Pulsed drain current, T = 25 C I 88 C D puls Short circuit current, T = 55 ... + 150 C 68 I j SC Short circuit dissipation, T = 55 ... + 150 C P W j SCmax V 50 V / V 15 V 800 / 1000 DS DS Power dissipation 95 P tot Operating and storage temperature range T, T 55 ... + 150 C j stg DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55/150/56 Thermal resistance K/W Chip-case R 1.32 th JC Chip-ambient R 75 th JA 1 19.02.04 TEMPFET BTS 121 A Electrical Characteristics at T = 25 C, unless otherwise specified. j Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V V (BR)DSS V = 0, I = 0.25 mA 100 GS D Gate threshold voltage V GS(th) V = V , I = 1 mA 1.5 2.0 2.5 GS DS D Zero gate voltage drain current I A DSS V = 0 V, V = 100 GS DS T = 25 C 0.1 1.0 j T = 125 C 10 100 j Gate-source leakage current I GSS V = 20 V, V = 0 GS DS T = 25 C 10 100 nA j T = 150 C 2 4 A j Drain-source on-state resistance R DS(on) V = 4.5 V, I = 9.5 A 0.085 0.1 GS D Dynamic Characteristics Forward transconductance g S fs V 2 I R , I = 9.5 A 814 DS D DS(on)max D Input capacitance C pF iss V = 0, V = 25 V, f = 1 MHz 1200 1500 GS DS Output capacitance C oss V = 0, V = 25 V, f = 1 MHz 320 580 GS DS Reverse transfer capacitance C rss V = 0, V = 25 V, f = 1 MHz 160 260 GS DS Turn-on time t , (t = t + t ) t 25 40 ns on on d(on) r d(on) V = 30 V, V = 5 V, I = 3 A, R = 50 CC GS D GS t 110 170 r Turn-off time t , (t = t + t ) t 210 270 off off d(off) f d(off) V = 30 V, V = 5 V, I = 3 A, R = 50 CC GS D GS t 100 130 f 2 19.02.04

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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