X-On Electronics has gained recognition as a prominent supplier of SCT3022ALHRC11 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT3022ALHRC11 SiC MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

SCT3022ALHRC11 ROHM

SCT3022ALHRC11 electronic component of ROHM
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See Product Specifications
Part No.SCT3022ALHRC11
Manufacturer: ROHM
Category: SiC MOSFETs
Description: SiC MOSFETs 650V 93A 339W SIC 22mOhm TO-247N
Datasheet: SCT3022ALHRC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 71.6625 ea
Line Total: USD 71.66 
Availability - 215
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
937
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 59.664
100 : USD 59.653
450 : USD 59.642
900 : USD 59.631
2700 : USD 59.62

215
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 71.6625
5 : USD 63.5375
10 : USD 59.6375
25 : USD 54.6
50 : USD 52.4875
100 : USD 49.2375

436
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 119.2727
2 : USD 114.9836
3 : USD 111.3206
5 : USD 108.1677
10 : USD 105.4353
20 : USD 103.0534
50 : USD 100.9663
100 : USD 99.1294
250 : USD 97.5062

436
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 119.2727
2 : USD 114.9836
3 : USD 111.3206
5 : USD 108.1677
10 : USD 105.4353
20 : USD 103.0534
50 : USD 100.9663
100 : USD 99.1294
250 : USD 97.5062

182
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 119.2727
2 : USD 114.9836
3 : USD 111.3206
5 : USD 108.1677
10 : USD 105.4353
20 : USD 103.0534
50 : USD 100.9663
100 : USD 99.1294

   
Manufacturer
Product Category
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Package / Case
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SCT3022ALHRC11 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT3022ALHRC11 and other electronic components in the SiC MOSFETs category and beyond.

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SCT3022ALHR Datasheet Automotive Grade N-channel SiC power MOSFET lOutline TO-247N V 650V DSS R (Typ.) 22m DS(on) *1 I 93A D P 339W (3) D (2) (1) lInner circuit lFeatures (1) Gate 1) Qualified to AEC-Q101 (2) Drain (3) Source 2) Low on-resistance *Body Diode 3) Fast switching speed 4) Fast reverse recovery Please note Driver Source and Power Source are 5) Easy to parallel not exchangeable. Their exchange might lead to malfunction. 6) Simple to drive 7) Pb-free lead plating RoHS compliant lPackaging specifications Packing Tube lApplication Automobile Reel size (mm) - Switch mode power supplies Tape width (mm) - Type Basic ordering unit (pcs) 30 Taping code C11 Marking SCT3022AL lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source Voltage 650 V DSS *1 T = 25C I 93 A c D Continuous Drain current *1 T = 100C 65 A I c D *2 Pulsed Drain current I 232 A D,pulse Gate - Source voltage (DC) V -4 to +22 V GSS *3 Gate - Source surge voltage (t < 300ns) V -4 to +26 V surge GSS surge *4 Recommended drive voltage V 0 / +18 V GS op Junction temperature T 175 C j T Range of storage temperature -55 to +175 C stg www.rohm.com TSQ50211-SCT3022ALHR 2018 ROHM Co., Ltd. All rights reserved. 1/12 16.Nov.2018 - Rev.001 TSZ2211114001Datasheet SCT3022ALHR lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V = 0V, I = 1mA GS D Drain - Source breakdown V T = 25C 650 - - V (BR)DSS j voltage T = -55C 650 - - j V = 0V, V =650V GS DS Zero Gate voltage I T = 25C - 1 10 A DSS j Drain current T = 150C - 2 - j Gate - Source leakage current I V = +22V , V = 0V - - 100 nA GSS+ GS DS I V = , V = 0V Gate - Source leakage current -4V - - -100 nA GSS- GS DS V V = 10V, I = Gate threshold voltage 18.2mA 2.7 - 5.6 V GS (th) DS D V = 18V, I = 36A GS D Static Drain - Source *5 T = 25C R - 22 28.6 m j DS(on) on - state resistance T = 150C - 32 - j R Gate input resistance f = 1MHz, open drain - 5 - G lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 0.34 0.44 C/W thJC lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R C 4.83E-03 1.40E-03 th1 th1 R C 1.73E-01 K/W 1.13E-02 Ws/K th2 th2 R 1.63E-01 C 6.02E-02 th3 th3 R R T th1 th,n T j c P D C C C th1 th2 th,n T a www.rohm.com TSQ50211-SCT3022ALHR 2018 ROHM Co., Ltd. All rights reserved. 2/12 16.Nov.2018 - Rev.001 TSZ2211115001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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