DMC3730UVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low On-Resistance D MAX Device BV R DSS DS(ON) MAX T = +25C A Low Input Capacitance 0.45 V = 4.5V Fast Switching Speed GS Q1 25V 0.68A Low Input/Output Leakage 0.60 V = 2.7V GS N-Channel ESD Protected Gate 0.73 V = 1.8V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 1.1 V = -4.5V GS Q2 Halogen and Antimony Free. Green Device (Note 3) -25V 1.5 V = -2.7V -0.46A GS P-Channel Qualified to AEC-Q101 Standards for High Reliability 2.2 V = -1.8V GS Mechanical Data Description Case: TSOT26 This new generation MOSFET is designed to minimize the on-state Case Material: Molded Plastic, Green Molding Compound. resistance (R ) and yet maintain superior switching performance, DS(ON) UL Flammability Classification Rating 94V-0 making it ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Applications e3 Solderable per MIL-STD-202, Method 208 Backlighting Weight: 0.013 grams (Approximate) DC-DC Converters Power Management Functions D1 D2 TSOT26 G1 1 6 D1 G1 G2 S2 2 5 S1 Gate Protection Gate Protection G2 3 4 D2 ESD PROTECTED S1 Diode S2 Diode Q1 N-Channel Top View Top View Q2 P-Channel Ordering Information (Note 4) Part Number Case Packaging DMC3730UVT-7 TSOT26 3000 / Tape & Reel DMC3730UVT-13 TSOT26 10,000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMC3730UVT Maximum Ratings ( T = +25C, unless otherwise specified.) A Q1 Q2 Characteristic Symbol Unit N-CHANNEL P-CHANNEL Drain-Source Voltage V 25 -25 V DSS Gate-Source Voltage V 8 8 V GSS Continuous Drain Current (Note 6) Steady N-Channel: V = 4.5V 0.68 -0.46 A GS T = +25C I A D State P-Channel: V = -4.5V GS -0.3 Maximum Continuous Body Diode Forward Current (Note 6) I 0.3 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 3 -2.5 A DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.7 W D Steady State Thermal Resistance, Junction to Ambient (Note 5) 180 C/W R JA Total Power Dissipation (Note 6) P 0.9 W D Steady State Thermal Resistance, Junction to Ambient (Note 6) 140 R JA C/W Thermal Resistance, Junction to Case (Note 6) 60 R JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics N-CHANNEL Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 25 - - V BV V = 0V, I = 250A DSS GS D - - 1.0 A Zero Gate Voltage Drain Current T = +25C I V = 20V, V = 0V J DSS DS GS Gate-Source Leakage I - - 10 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.45 0.7 1.1 V V = V , I = 250A GS(TH) DS GS D - 0.28 0.45 V = 4.5V, I = 0.5A GS D Static Drain-Source On-Resistance R - 0.33 0.60 V = 2.7V, I = 0.25A DS(ON) GS D - 0.39 0.73 V = 1.8V, I = 0.1A GS D Diode Forward Voltage - 0.75 1.2 V VSD VGS = 0V, IS = 0.5A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance - 50 - pF Ciss V = 10V, V = 0V, DS GS Output Capacitance - 28 - pF C oss f = 1.0MHz Reverse Transfer Capacitance - 9 - pF C rss Gate Resistance - 64 - R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge - 1.64 - nC Q g V = 5V, I = 0.5A, DS D Gate-Source Charge Q - 0.38 - nC gs V = 4.5V GS Gate-Drain Charge Q - 0.45 - nC gd Turn-On Delay Time t - 3 - ns D(ON) Turn-On Rise Time t - 8 - ns R V = 4.5V, V = 6V, GS DS Turn-Off Delay Time - 17 - ns R = 50, I = 0.5A tD(OFF) g D Turn-Off Fall Time - 13 - ns t F 2 of 10 July 2018 DMC3730UVT www.diodes.com Diodes Incorporated Document number: DS39886 Rev. 2 - 2 ADVANCE INFORMATION