X-On Electronics has gained recognition as a prominent supplier of SCT3030ARC14 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT3030ARC14 SiC MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

SCT3030ARC14 ROHM

SCT3030ARC14 electronic component of ROHM
SCT3030ARC14 ROHM
SCT3030ARC14 SiC MOSFETs
SCT3030ARC14  Semiconductors

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See Product Specifications
Part No. SCT3030ARC14
Manufacturer: ROHM
Category: SiC MOSFETs
Description: SiC MOSFETs TO247 650V 70A N-CH SIC
Datasheet: SCT3030ARC14 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 38.203 ea
Line Total: USD 38.2 
Availability - 230
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
230
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 38.203
10 : USD 37.565
25 : USD 37.4
240 : USD 37.323
480 : USD 37.301
1200 : USD 37.29

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Configuration
Package / Case
Packaging
Series
Technology
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SCT3030ARC14 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT3030ARC14 and other electronic components in the SiC MOSFETs category and beyond.

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SCT3030AR N-channel SiC power MOSFET Datasheet lOutline TO-247-4L V 650V DSS R (Typ.) 30m DS(on) *1 70A I D P 262W D (1) (2)(3)(4) lInner circuit lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel Please note Driver Source and Power Source are 5) Simple to drive not exchangeable. Their exchange might lead to malfunction. 6) Pb-free lead plating RoHS compliant lPackaging specifications Packing Tube lApplication Solar inverters Reel size (mm) - DC/DC converters Tape width (mm) - Type Switch mode power supplies Basic ordering unit (pcs) 30 Induction heating Taping code C14 SCT3030AR Motor drives Marking lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit Drain - Source Voltage V 650 V DSS *1 T = 25C I 70 A c D Continuous Drain current *1 T = 100C I 49 A c D *2 Pulsed Drain current I 175 A D,pulse V Gate - Source voltage (DC) -4 to +22 V GSS *3 Gate - Source surge voltage (t < 300ns) -4 to +26 V V surge GSS surge *4 Recommended drive voltage 0 / +18 V V GS op T Junction temperature 175 C j T Range of storage temperature -55 to +175 C stg www.rohm.com TSQ50254-SCT3030AR 2019 ROHM Co., Ltd. All rights reserved. 1/12 31.Jul.2019 - Rev.001 TSZ2211114001SCT3030AR Datasheet lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V = 0V, I = 1mA GS D Drain - Source breakdown V T = 25C 650 - - V (BR)DSS j voltage T = -55C 650 - - j V = 0V, V =650V GS DS Zero Gate voltage I T = 25C - 1 10 A DSS j Drain current T = 150C - 2 - j Gate - Source I V = V = 0V +22V, - - 100 nA GSS+ GS DS leakage current Gate - Source I V = V = 0V -4V, - - -100 nA GSS- GS DS leakage current Gate threshold voltage V V = 10V, I = 13.3mA 2.7 - 5.6 V GS (th) DS D V = 18V, I = 27A GS D Static Drain - Source *5 T = 25C R - 30 39 m j DS(on) on - state resistance T = 150C - 43 - j R Gate input resistance f = 1MHz, open drain - 7 - G lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 0.44 0.57 C/W thJC lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit -2 -3 R C 2.5610 1.3910 th1 th1 -1 -2 R C 1.9510 K/W 1.0010 Ws/K th2 th2 -1 -2 R C 2.2010 3.5710 th3 th3 R R T th1 th,n T j c P C C D C th1 th2 th,n T a www.rohm.com TSQ50254-SCT3030AR 2019 ROHM Co., Ltd. All rights reserved. 2/12 31.Jul.2019 - Rev.001 TSZ2211115001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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