X-On Electronics has gained recognition as a prominent supplier of SH8M51GZETB MOSFETs across the USA, India, Europe, Australia, and various other global locations. SH8M51GZETB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SH8M51GZETB ROHM

SH8M51GZETB electronic component of ROHM
SH8M51GZETB ROHM
SH8M51GZETB MOSFETs
SH8M51GZETB  Semiconductors

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See Product Specifications
Part No. SH8M51GZETB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 100V NCH+PCH POWER
Datasheet: SH8M51GZETB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.725 ea
Line Total: USD 1.72 
Availability - 1987
Ship by Wed. 30 Apr to Fri. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1987
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 1.725
10 : USD 1.26
100 : USD 0.8646
500 : USD 0.7249
1000 : USD 0.6996
2500 : USD 0.6721

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SH8M51GZETB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SH8M51GZETB and other electronic components in the MOSFETs category and beyond.

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SH8M51 Datasheet 100V Nch+Pch Power MOSFET llOutline Tr1:Nch Tr2:Pch Symbol V 100V -100V DSS SOP8 R (Max.) 170m 290m DS(on) I 3.0A 2.5A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Quantity (pcs) 2500 Taping code TB Marking SH8M51 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Value Parameter Symbol Unit Tr1:Nch Tr2:Pch V Drain - Source voltage 100 -100 V DSS I Continuous drain current 3.0 2.5 A D *1 I Pulsed drain current 12 10 A DP V Gate - Source voltage 20 20 V GSS *2 P 2.0 D Power dissipation total W *3 P 1.4 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/19 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved. SH8M51 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 thJA Thermal resistance, junction - ambient total /W *3 R - - 89.2 thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Type Conditions Unit Min. Typ. Max. V = 0V, I = 1mA Tr1 100 - - GS D Drain - Source breakdown V V (BR)DSS voltage Tr2 V = 0V, I = -1mA -100 - - GS D V I = 1mA, referenced to 25 (BR)DSS Tr1 D - 116.9 - Breakdown voltage mV/ temperature coefficient T I = -1mA, referenced to 25 j Tr2 D - -91.3 - Tr1 V = 100V, V = 0V - - 1 DS GS Zero gate voltage I A DSS drain current Tr2 V = -100V, V = 0V - - -1 DS GS Tr1 V = 20V, V = 0V - - 10 GS DS Gate - Source I A GSS leakage current Tr2 V = 20V, V = 0V - - 10 GS DS Tr1 V = 10V, I = 1mA 1.0 - 2.5 DS D Gate threshold V V GS(th) voltage Tr2 V = -10V, I = -1mA -1.0 - -2.5 DS D V I = 1mA, referenced to 25 Tr1 - -3.6 - GS(th) D Gate threshold voltage mV/ temperature coefficient T I = -1mA, referenced to 25 Tr2 - 3.0 - j D V = 10V, I = 3.0A - 120 170 GS D Tr1 V = 4.5V, I = 3.0A - 130 180 GS D V = 4.0V, I = 3.0A - 135 190 GS D Static drain - source *4 R m DS(on) on - state resistance V = -10V, I = -2.5A - 210 290 GS D Tr2 V = -4.5V, I = -1.25A - 230 320 GS D V = -4.0V, I = -1.25A - 240 340 GS D Tr1 - 6.9 - R Gate resistance f=1MHz, open drain G Tr2 - 6.8 - Tr1 V = 10V, I = 3.0A 3.5 - - DS D Forward Transfer *4 Y S fs Admittance V = -10V, I = -2.5A Tr2 3.5 - - DS D *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/19 20190527 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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