X-On Electronics has gained recognition as a prominent supplier of US6J12TCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. US6J12TCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

US6J12TCR ROHM

US6J12TCR electronic component of ROHM
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See Product Specifications
Part No.US6J12TCR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET -12V PCH+PCH SMALL SIGNAL
Datasheet: US6J12TCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7348 ea
Line Total: USD 0.73 
Availability - 1164
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1164
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7348
10 : USD 0.5379
100 : USD 0.3652
500 : USD 0.2948
1000 : USD 0.2673
3000 : USD 0.2376
6000 : USD 0.2222
9000 : USD 0.2123

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the US6J12TCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the US6J12TCR and other electronic components in the MOSFETs category and beyond.

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US6J12 Datasheet -12V Pch+Pch Small Signal MOSFET llOutline SOT-363T V -12V DSS R (Max.) 105m DS(on) TUMT6 I 2A D P 1.0W D llFeatures llInner circuit 1) Low on - resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TUMT6) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Quantity (pcs) 3000 Taping code TCR Marking J12 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -12 V DSS Continuous drain current I 2 A D *1 I Pulsed drain current 6 A DP Gate - Source voltage V 0 -8 V GSS *2 P 1.0 D Power dissipation (total) W *3 P 0.91 D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved. US6J12 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 thJA Thermal resistance, junction - ambient (total) /W *3 R - - 137 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V (BR)DSS I = -1mA D Breakdown voltage - -5.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -10 A DSS DS GS drain current Gate - Source I V = 0V, V = -8V - - -10 A GSS DS GS leakage current Gate threshold V V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 2.7 - mV/ temperature coefficient T j referenced to 25 V = -4.5V, I = -2A - 75 105 GS D V = -2.5V, I = -1A - 105 145 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -1A - 150 225 GS D V = -1.5V, I = -0.4A - 200 400 GS D Gate resistance R f = 1MHz, open drain - 19 - G Forward Transfer *4 Y V = -6V, I = -2A 2.3 - - S fs DS D Admittance www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/11 20190527 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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