X-On Electronics has gained recognition as a prominent supplier of US6T7TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. US6T7TR Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

US6T7TR ROHM

US6T7TR electronic component of ROHM
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See Product Specifications
Part No.US6T7TR
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP BIPOLAR 30V 1.5A
Datasheet: US6T7TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
685: USD 0.1329 ea
Line Total: USD 91.04 
Availability - 2619
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ: 685  Multiples: 1
Pack Size: 1
Availability Price Quantity
2619
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 685
Multiples : 1
685 : USD 0.1329

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the US6T7TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the US6T7TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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US6T7 Transistors Low frequency amplifier (-30V, -1.5A) US6T7 z Dimensions (Unit : mm) z Application Low frequency amplifier Driver z Features 1) A collector current is large. 2) VCE(sat) : max. 370mV At IC = 1A / IB = 50mA ROHM : TUMT6 Abbreviated symbol : T07 z Absolute maximum ratings (Ta=25C) z Equivalent circuit Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V (6) (5) (4) VCEO 30 V Collector-emitter voltage Emitter-base voltage VEBO 6 V IC 1.5 A Collector current 1 ICP 3 A 2 400 mW Power dissipation PC 3 1.0 W (1) (2) (3) Junction temperature Tj 150 C Range of storage temperature Tstg 55 to +150 C 1 Single pulse, PW=1ms 2 Each Terminal Mounted on a Recommended t 3 Mounted on a 25mm25mm 0.8mm Ceramic substrate z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO 30 V IC=10A Collector-base breakdown voltage Collector-emitter breakdown voltage BVCEO 30 V IC=1mA Emitter-base breakdown voltage BVEBO 6 V IE=10A ICBO 100 nA VCB=30V Collector cutoff current Emitter cutoff current IEBO 100 nA VEB=6V Collector-emitter saturation voltage VCE(sat) 190 370 mV IC=1A, IB=50mA DC current gain hFE 270 680 VCE=2V, IC=100mA fT 280 MHz VCE=2V, IE=100mA, f=100MHz Transition frequency Collector output capacitance Cob 13 pF VCB=10V, IE=0A, f=1MHz Pulsed Rev.B 1/2 Not Recommended for New Designs 0.2Max.US6T7 Transistors z Packaging specifications Package Taping Type Code TR Basic ordering unit (pieces) 3000 US6T7 z Electrical characteristic curves 1000 1 10 VCE=2V Ta=25C Ta=100C Pulsed Pulsed Ta=40C Ta=25C Ta=25C Ta=100C 1 VBE(sat) Ta=40C 100 0.1 0.1 IC/IB=50/1 IC/IB=10/1 Ta=100C IC/IB=20/1 Ta=25C VCE(sat) 0.01 Ta=40C IC/IB=20/1 Pulsed 10 0.01 0.001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain Fig.3 Collector-emitter saturation voltage Fig.2 Collector-emitter saturation voltage vs. collector current base-emitter saturation voltage vs. collector current vs. collector current 1 1000 1000 VCE=2V Ta=25C Ta=25C VCE=5V Pulsed VCE=2V f=100MHz IC/IB=20/1 tstg Ta=100C Ta=25C 0.1 100 Ta=40C tf 100 tdon 0.01 10 tr 0.001 10 1 0 0.5 1 1.5 0.01 0.1 1 10 0.01 0.1 1 10 BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.5 Gain bandwidth product Fig.6 Switching time Fig.4 Grounded emitter propagation vs. emitter current characteristics 1000 Ta=25C IC=0A f=1MHz Cib 100 Cob 10 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.B 2/2 Not Recommended for New Designs EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE COLLECTOR OUTPUT CAPACITANCE : Cob (pF) BASE SATURATION VOLTAGE : VBE (sat) (V) TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) SWITCHING TIME : (ns) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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