US6T7TR ROHM

US6T7 Transistors Low frequency amplifier (-30V, -1.5A) US6T7 z Dimensions (Unit : mm) z Application Low frequency amplifier Driver z Features 1) A collector current is large. 2) VCE(sat) : max. 370mV At IC = 1A / IB = 50mA ROHM : TUMT6 Abbreviated symbol : T07 z Absolute maximum ratings (Ta=25C) z Equivalent circuit Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V (6) (5) (4) VCEO 30 V Collector-emitter voltage Emitter-base voltage VEBO 6 V IC 1.5 A Collector current 1 ICP 3 A 2 400 mW Power dissipation PC 3 1.0 W (1) (2) (3) Junction temperature Tj 150 C Range of storage temperature Tstg 55 to +150 C 1 Single pulse, PW=1ms 2 Each Terminal Mounted on a Recommended t 3 Mounted on a 25mm25mm 0.8mm Ceramic substrate z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO 30 V IC=10A Collector-base breakdown voltage Collector-emitter breakdown voltage BVCEO 30 V IC=1mA Emitter-base breakdown voltage BVEBO 6 V IE=10A ICBO 100 nA VCB=30V Collector cutoff current Emitter cutoff current IEBO 100 nA VEB=6V Collector-emitter saturation voltage VCE(sat) 190 370 mV IC=1A, IB=50mA DC current gain hFE 270 680 VCE=2V, IC=100mA fT 280 MHz VCE=2V, IE=100mA, f=100MHz Transition frequency Collector output capacitance Cob 13 pF VCB=10V, IE=0A, f=1MHz Pulsed Rev.B 1/2 Not Recommended for New Designs 0.2Max.US6T7 Transistors z Packaging specifications Package Taping Type Code TR Basic ordering unit (pieces) 3000 US6T7 z Electrical characteristic curves 1000 1 10 VCE=2V Ta=25C Ta=100C Pulsed Pulsed Ta=40C Ta=25C Ta=25C Ta=100C 1 VBE(sat) Ta=40C 100 0.1 0.1 IC/IB=50/1 IC/IB=10/1 Ta=100C IC/IB=20/1 Ta=25C VCE(sat) 0.01 Ta=40C IC/IB=20/1 Pulsed 10 0.01 0.001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain Fig.3 Collector-emitter saturation voltage Fig.2 Collector-emitter saturation voltage vs. collector current base-emitter saturation voltage vs. collector current vs. collector current 1 1000 1000 VCE=2V Ta=25C Ta=25C VCE=5V Pulsed VCE=2V f=100MHz IC/IB=20/1 tstg Ta=100C Ta=25C 0.1 100 Ta=40C tf 100 tdon 0.01 10 tr 0.001 10 1 0 0.5 1 1.5 0.01 0.1 1 10 0.01 0.1 1 10 BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.5 Gain bandwidth product Fig.6 Switching time Fig.4 Grounded emitter propagation vs. emitter current characteristics 1000 Ta=25C IC=0A f=1MHz Cib 100 Cob 10 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.B 2/2 Not Recommended for New Designs EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE COLLECTOR OUTPUT CAPACITANCE : Cob (pF) BASE SATURATION VOLTAGE : VBE (sat) (V) TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) SWITCHING TIME : (ns) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)