X-On Electronics has gained recognition as a prominent supplier of US6K4TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. US6K4TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

US6K4TR ROHM

US6K4TR electronic component of ROHM
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See Product Specifications
Part No.US6K4TR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Med Pwr, Sw MOSFET N Chan, 20V, 1.5A
Datasheet: US6K4TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1966 ea
Line Total: USD 0.98 
Availability - 4009
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
4009
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 5
Multiples : 5
5 : USD 0.1966
50 : USD 0.1722
150 : USD 0.1617
500 : USD 0.1489
3000 : USD 0.1324
6000 : USD 0.1289

3723
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6705
10 : USD 0.5485
100 : USD 0.3795
500 : USD 0.3128
1000 : USD 0.2794
3000 : USD 0.2495
6000 : USD 0.2369
9000 : USD 0.2265

2521
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 236
Multiples : 1
236 : USD 0.4501
250 : USD 0.432
500 : USD 0.4164
1000 : USD 0.4029
2500 : USD 0.3909

2910
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 266
Multiples : 1
266 : USD 0.3831
500 : USD 0.3692
1000 : USD 0.3572
2500 : USD 0.3467

4844
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 44
Multiples : 1
44 : USD 0.9246
54 : USD 0.7621
100 : USD 0.507
200 : USD 0.5054
500 : USD 0.3917
1000 : USD 0.3527
3000 : USD 0.3055

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the US6K4TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the US6K4TR and other electronic components in the MOSFETs category and beyond.

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US6K4 Transistors 1.8V Drive Nch+Nch MOSFET US6K4 z Structure z Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT6 z Features 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 1.8V drive. Abbreviated symbol : K04 zApplications Switching z Packaging specifications z Inner circuit (6) (5) (4) Package Taping Type Code TR Basic ordering unit (pieces) 3000 1 US6K4 2 2 1 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (1) (2) (3) (4) Tr2 Source (5) Tr2 Gate 1 ESD PROTECTION DIODE (6) Tr1 Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) <It is the same ratings for the Tr1 and Tr2> Parameter Symbol Limits Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS 10 V Continuous I 1.5 A D Drain current 1 Pulsed IDP 3.0 A Source current Continuous IS 0.6 A (Body diode) 1 Pulsed I 2.4 A SP 1.0 W / TOTAL 2 Total power dissipation P D 0.7 W / ELEMENT Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit 125 C/W / TOTAL Channel to ambient Rth(ch-a) 179 C/W / ELEMENT Mounted on a ceramic board Rev.A 1/3 0.2Max.US6K4 Transistors z Electrical characteristics (Ta=25C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=10V, VDS=0V Drain-source breakdown voltage V(BR) DSS 20 VID= 1mA, VGS=0V Zero gate voltage drain current I 1 AV = 20V, V =0V DSS DS GS Gate threshold voltage VGS (th) 0.3 1.0 V VDS= 10V, ID= 1mA 130 180 m ID= 1.5A, VGS= 4.5V Static drain-source on-state R 170 240 m I = 1.5A, V = 2.5V DS (on) D GS resistance 220 310 m ID= 0.8A, VGS= 1.8V Forward transfer admittance Yfs 1.6 SVDS= 10V, ID= 1.5A Input capacitance C 110 pF V = 10V iss DS Output capacitance Coss 18 pF VGS=0V Reverse transfer capacitance Crss 15 pF f=1MHz Turn-on delay time t 5 ns d (on) ID= 1.0A VDD 10V Rise time tr 5 ns VGS= 4.5V Turn-off delay time td (off) 20 ns RL= 10 Fall time t 3 ns RGS=10 f Total gate charge Qg 1.8 2.5 nC VDD 10V VGS= 4.5V Gate-source charge Qgs 0.3 nC ID= 1.5A Gate-drain charge Q 0.3 nC gd Pulsed z Body diode characteristics (Source-drain) (Ta=25C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I = 0.6A, V =0V S GS Rev.A 2/3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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