US6K4 Transistors 1.8V Drive Nch+Nch MOSFET US6K4 z Structure z Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT6 z Features 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 1.8V drive. Abbreviated symbol : K04 zApplications Switching z Packaging specifications z Inner circuit (6) (5) (4) Package Taping Type Code TR Basic ordering unit (pieces) 3000 1 US6K4 2 2 1 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (1) (2) (3) (4) Tr2 Source (5) Tr2 Gate 1 ESD PROTECTION DIODE (6) Tr1 Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) <It is the same ratings for the Tr1 and Tr2> Parameter Symbol Limits Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS 10 V Continuous I 1.5 A D Drain current 1 Pulsed IDP 3.0 A Source current Continuous IS 0.6 A (Body diode) 1 Pulsed I 2.4 A SP 1.0 W / TOTAL 2 Total power dissipation P D 0.7 W / ELEMENT Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit 125 C/W / TOTAL Channel to ambient Rth(ch-a) 179 C/W / ELEMENT Mounted on a ceramic board Rev.A 1/3 0.2Max.US6K4 Transistors z Electrical characteristics (Ta=25C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=10V, VDS=0V Drain-source breakdown voltage V(BR) DSS 20 VID= 1mA, VGS=0V Zero gate voltage drain current I 1 AV = 20V, V =0V DSS DS GS Gate threshold voltage VGS (th) 0.3 1.0 V VDS= 10V, ID= 1mA 130 180 m ID= 1.5A, VGS= 4.5V Static drain-source on-state R 170 240 m I = 1.5A, V = 2.5V DS (on) D GS resistance 220 310 m ID= 0.8A, VGS= 1.8V Forward transfer admittance Yfs 1.6 SVDS= 10V, ID= 1.5A Input capacitance C 110 pF V = 10V iss DS Output capacitance Coss 18 pF VGS=0V Reverse transfer capacitance Crss 15 pF f=1MHz Turn-on delay time t 5 ns d (on) ID= 1.0A VDD 10V Rise time tr 5 ns VGS= 4.5V Turn-off delay time td (off) 20 ns RL= 10 Fall time t 3 ns RGS=10 f Total gate charge Qg 1.8 2.5 nC VDD 10V VGS= 4.5V Gate-source charge Qgs 0.3 nC ID= 1.5A Gate-drain charge Q 0.3 nC gd Pulsed z Body diode characteristics (Source-drain) (Ta=25C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I = 0.6A, V =0V S GS Rev.A 2/3