US6T6TR ROHM

US6T6 Transistors Low frequency amplifier US6T6 z Dimensions (Unit : mm) z Application Low frequency amplifier Driver z Features 1) A collector current is large. < 2) VCE(sat) 180mV = At I C = 1A / IB = 50mA ROHM : TUMT6 Abbreviated symbol : T06 z Equivalent circuit z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit (6) (5) (4) Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V IC 2 A Collector current 1 ICP 4 A 2 400 mW Power dissipation PC 3 1.0 W (1) (2) (3) Junction temperature Tj 150 C Range of storage temperature Tstg 55 to +150 C 1 Single pulse, Pw=1ms 2 Each terminal mounted on a recommended t 3 Mounted on a 25mm25mm 0.8mm Ceramic substrate. z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO 15 V IC=10A Collector-base breakdown voltage Collector-emitter breakdown voltage BVCEO 12 V IC=1mA BVEBO 6 V IE=10A Emitter-base breakdown voltage Collector cutoff current ICBO 100 nA VCB=15V Emitter cutoff current IEBO 100 nA VEB=6V Collector-emitter saturation voltage VCE(sat) 120 180 mV IC=1A, IB=50mA DC current gain hFE 270 680 VCE=2V, IC=200mA fT 360 MHz VCE=2V, IE=200mA, f=100MHz Transition frequency VCB=10V, IE=0A, f=1MHz Collector output capacitance Cob 15 pF Pulsed Rev.C 1/2 Not Recommended for New Designs 0.2Max.US6T6 Transistors z Packaging specifications Package Taping Type Code TR Basic ordering unit (pieces) 3000 US6T6 z Electrical characteristic curves 1000 10 1 Ta=25C PULSED Ta=100C VBE(sat) 1 25C Ta=40C 0.1 40C Ta=25C Ta=100C VCE(sat) IC/IB=50 100 0.1 20 Ta=100C Ta=25C 10 Ta=40C 0.01 0.01 VCE=2V IC/IB=20 PULSED PULSED 10 0.001 0.001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage Fig1. DC current gain Fig.3 Collector-emitter saturation voltage vs.collector current base-emitter saturation voltage vs.collector current vs.collector current 1000 10 1000 Ta=25C VCE=2V PULSED 1 Ta=100C 100 tstg 25C 40C 0.1 100 tdon tf 10 0.01 Ta=25C tr VCE=2V PULSED Ta=25C PULSED IC=20 IB1=20 IB=2 1 0.001 10 0 0.5 1 0.001 0.01 0.1 110 0.001 0.01 0.1 1 EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) BASE TO EMITTER CURRENT : VBE (V) Fig.6 Switching time Fig.5 Gain bandwidth product Fig.4 Grounded emitter propagation characteristics vs.emitter current 1000 Ta=25C IE=0A f=1MHz 100 Cib Cob 10 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig7. Collector output capacitance vs.collector-base voltage Emitter input capacitance vs.emitter-base voltage Rev.C 2/2 Not Recommended for New Designs COLLECTOR CURRENT : IC (A) EMITTER INPUT CAPACITANCE : Cib (pF) DC CURRENT GAIN : hFE COLLECTOR OUTPUT CAPACITANCE : Cob (pF) BASE SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) TRANSITION FREQUENCY : fT (MHz) SWITCHING TIME : (ns) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)