X-On Electronics has gained recognition as a prominent supplier of US5U38TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. US5U38TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

US5U38TR ROHM

US5U38TR electronic component of ROHM
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See Product Specifications
Part No.US5U38TR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET P Chan-20V+/-1A 2.5V Drive
Datasheet: US5U38TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
241: USD 0.169 ea
Line Total: USD 40.73 
Availability - 2910
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 241  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 241
Multiples : 1
241 : USD 0.169
500 : USD 0.1573
1000 : USD 0.1529
2000 : USD 0.1522
3000 : USD 0.1489

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the US5U38TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the US5U38TR and other electronic components in the MOSFETs category and beyond.

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US5U38 Datasheet 2.5V Drive Pch+SBD MOSFET llOutline TUMT5 V -20V DSS R (Max.) 390m DS(on) I 1.0A D P 1.0W D llInner circuit llFeatures 1) The US5U30 combines Pch MOSFET with a Schottky barrier diode in a single TUMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low V schottky barrier diode. F 5) Pb-free lead plating RoHS compliant. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type switching Basic ordering unit (pcs) 3000 Taping code TR Marking U38 llAbsolute maximum ratings (T = 25C) a <MOSFET> Parameter Symbol Value Unit Drain - Source voltage V -20 V DSS V Gate - Source voltage 12 V GSS Continuous drain current I 1.0 A D *1 I Pulsed drain current 4.0 A D, pulse I Continuous source current (body diode) -0.4 A S *1 Pulsed source current (body diode) I -4.0 A S, pulse *3 P Power dissipation 0.7 W/element D Junction temperature T 150 j www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/10 20150730 - Rev.001 US5U38 Datasheet llAbsolute maximum ratings (T = 25C) a <Di> Parameter Symbol Value Unit V Repetitive peak reverse voltage 25 V RM V Reverse voltage 20 V R I Forward current 0.7 A F *2 I Forward current surge peak 3.0 A FSM *3 P Power dissipation 0.5 W/element D T Junction temperature 150 j <MOSFET + Di> Parameter Symbol Value Unit *3 P Power dissipation 1.0 W/total D T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <MOSFET> Values Parameter Symbol Conditions Unit Min. Typ. Max. I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current V V = -10V, I = -1mA Gate threshold voltage -0.7 - -2.0 V GS(th) DS D V = -4.5V, I = -1A - 280 390 GS D Static drain - source *4 R V = -4.0V, I = -1A - 310 430 m DS(on) GS D on - state resistance V = -2.5V, I = -0.5A - 570 800 GS D Forward Transfer *4 Y V = -10V, I = -0.5A 0.7 - - S fs DS D Admittance www.rohm.com 2/10 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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