US6J11 Datasheet Pch+Pch -12V -1.3A Small Signal MOSFET llOutline SOT-363T V -12V DSS R (Max.) 260m DS(on) TUMT6 I 1.3A D P 1.0W D llFeatures llInner circuit 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT6). 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking J11 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -12 V DSS Continuous drain current I 1.3 A D *1 I Pulsed drain current 5.2 A DP V Gate - Source voltage 10 V GSS total 1.0 *2 P D Power dissipation element 0.7 W *3 P total 0.91 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/11 20160630 - Rev.001 US6J11 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 125 *2 R thJA Thermal resistance, junction - ambient element - - 179 /W *3 R total - - 137 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 0V, V = 10V - - 10 A GSS DS GS leakage current Gate threshold V V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -1.3A - 190 260 GS D V = -2.5V, I = -0.6A - 280 390 GS D V = -1.8V, I = -0.6A - 400 600 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.5V, I = -0.2A - 530 1060 GS D V = -4.5V, I = -1.3A GS D - 280 400 T = 125 j Gate resistance R f = 1MHz, open drain - 28 - G Forward Transfer *4 Y V = -6V, I = -1.3A 1.4 2.8 - S fs DS D Admittance www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/11 20160630 - Rev.001