US6M1 Transistors 4V+2.5V Drive Nch+Pch MOSFET US6M1 z Structure z Dimensions (Unit : mm) Silicon N-channel / P-channel MOSFET TUMT6 z Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT6). Abbreviated symbol : M01 z Application Power switching, DC / DC converter. z Packaging specifications z Equivalent circuit Package Taping (6) (5) (4) Type Code TR 1 Basic ordering unit (pieces) 3000 US6M1 2 2 (1) Tr1 (Nch) Source 1 (2) Tr1 (Nch) Gate (1) (2) (3) (3) Tr2 (Pch) Drain (4) Tr2 (Pch) Source (5) Tr2 (Pch) Gate 1 ESD PROTECTION DIODE (6) Tr1 (Nch) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Limits Parameter Symbol Unit Tr1 : Nchannel Tr2 : Pchannel Drain-source voltage VDSS 30 20 V Gate-source voltage VGSS 20 12 V ID 1.4 1 A Continuous Drain current 1 I Pulsed DP 5.6 4 A Continuous IS 0.6 0.4 A Source current 1 (Body diode) Pulsed ISP 5.6 4 A 1 W / TOTAL 2 Total power dissipation PD 0.7 W / ELEMENT Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board. z Thermal resistance Parameter Symbol Limits Unit 125 C / W /TOTAL Channel to ambient Rth (ch-a) 179 C / W / ELEMENT 2 Mounted on a ceramic board. Rev.C1/7 0.2Max.US6M1 Transistors N-ch z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V(BR) DSS 30 VID=1mA, VGS=0V Zero gate voltage drain current I 1 AV =30V, V =0V DSS DS GS Gate threshold voltage VGS (th) 1.0 2.5 V VDS=10V, ID=1mA 170 240 ID=1.4A, VGS=10V Static drain-source on-state R 250 350 m I =1.4A, V =4.5V DS (on) D GS resistance 270 380 ID=1.4A, VGS=4V Forward transfer admittance Yfs 1.0 SID=1.4A, VDS=10V Input capacitance Ciss 70 pF VDS=10V Output capacitance C 15 pF V =0V oss GS Reverse transfer capacitance Crss 12 pF f=1MHz Turn-on delay time td (on) 6 ns ID=0.7A, VDD 15V Rise time tr 6 ns V =10V GS Turn-off delay time td (off) 13 ns RL=21 Fall time tf 8 ns RG=10 Total gate charge Qg 1.4 2.0 nC VDD 15V RL=11 Gate-source charge Q 0.6 nC V =5V R =10 gs GS G Gate-drain charge Qgd0.3 nC ID=1.4A Pulsed z Body diode characteristics (Source-Drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward voltage VSD 1.2 V IS=0.6A, VGS=0V Rev.C2/7