X-On Electronics has gained recognition as a prominent supplier of US6K1TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. US6K1TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

US6K1TR ROHM

Hot US6K1TR electronic component of ROHM
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See Product Specifications
Part No.US6K1TR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 2N-CH 30V 1.5A
Datasheet: US6K1TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
177: USD 0.2308 ea
Line Total: USD 40.85 
Availability - 32748
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 177  Multiples: 1
Pack Size: 1
Availability Price Quantity
17155
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6875
10 : USD 0.4609
100 : USD 0.3234
500 : USD 0.2673
1000 : USD 0.2464
3000 : USD 0.2013

32748
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 177
Multiples : 1
177 : USD 0.2308
200 : USD 0.2292
500 : USD 0.1934
1000 : USD 0.1869
3000 : USD 0.1772
6000 : USD 0.1707
24000 : USD 0.1579

2318
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 278
Multiples : 1
278 : USD 0.3667
500 : USD 0.3536
1000 : USD 0.342

   
Manufacturer
Product Category
RoHS - XON
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Transistor Polarity
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Packaging
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Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the US6K1TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the US6K1TR and other electronic components in the MOSFETs category and beyond.

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US6K1 Datasheet Nch + Nch 30V Small Signal MOSFET llOutline SOT-363T V 30V DSS R (Max.) 240m DS(on) TUMT6 I 1.5A D P 1.0W D llFeatures llInner circuit 1) Low on - resistance. 2) Space saving small surface mount package (TUMT6). 3) Low voltage drive(2.5V drive). llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking K01 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS Continuous drain current I 1.5 A D *1 I Pulsed drain current 6 A DP V Gate - Source voltage 12 V GSS total 1.0 *2 P D Power dissipation element 0.7 W *3 P total 0.91 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/11 20160630 - Rev.001 US6K1 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 125 *2 R thJA Thermal resistance, junction - ambient element - - 179 /W *3 R total - - 137 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 12V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 1.5A - 170 240 GS D Static drain - source *4 R V = 4V, I = 1.5A - 180 250 m DS(on) GS D on - state resistance V = 2.5V, I = 1.5A - 240 340 GS D Gate resistance R f = 1MHz, open drain - 16.7 - G Forward Transfer *4 Y V = 10V, I = 1.5A 1.5 - - S fs DS D Admittance www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/11 20160630 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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