US6K1 Datasheet Nch + Nch 30V Small Signal MOSFET llOutline SOT-363T V 30V DSS R (Max.) 240m DS(on) TUMT6 I 1.5A D P 1.0W D llFeatures llInner circuit 1) Low on - resistance. 2) Space saving small surface mount package (TUMT6). 3) Low voltage drive(2.5V drive). llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking K01 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS Continuous drain current I 1.5 A D *1 I Pulsed drain current 6 A DP V Gate - Source voltage 12 V GSS total 1.0 *2 P D Power dissipation element 0.7 W *3 P total 0.91 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/11 20160630 - Rev.001 US6K1 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 125 *2 R thJA Thermal resistance, junction - ambient element - - 179 /W *3 R total - - 137 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 12V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 1.5A - 170 240 GS D Static drain - source *4 R V = 4V, I = 1.5A - 180 250 m DS(on) GS D on - state resistance V = 2.5V, I = 1.5A - 240 340 GS D Gate resistance R f = 1MHz, open drain - 16.7 - G Forward Transfer *4 Y V = 10V, I = 1.5A 1.5 - - S fs DS D Admittance www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/11 20160630 - Rev.001