X-On Electronics has gained recognition as a prominent supplier of US6U37TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. US6U37TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

US6U37TR ROHM

US6U37TR electronic component of ROHM
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See Product Specifications
Part No.US6U37TR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET N Chan30V-1.5A 2.5V Drive
Datasheet: US6U37TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
220: USD 0.1852 ea
Line Total: USD 40.74 
Availability - 8730
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 220  Multiples: 1
Pack Size: 1
Availability Price Quantity
8730
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 220
Multiples : 1
220 : USD 0.1852
500 : USD 0.1675
1000 : USD 0.1611
2000 : USD 0.16
3000 : USD 0.1551
6000 : USD 0.1495

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the US6U37TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the US6U37TR and other electronic components in the MOSFETs category and beyond.

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US6U37 Transistors 2.5V Drive Nch+SBD MOSFET US6U37 z Structure z Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT6 Schottky barrier diode z Features 1) Nch MOSFET and schottky barrier diode are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol : U37 zApplications z Inner circuit Switching (6) (5) (4) z Package specifications Package Taping Type Code TR 2 Basic ordering unit (pieces) 3000 (1)Gate (2)Source 1 US6U37 (3)Cathode (4)Anode (1) (2) (3) (5)Anode 1 ESD protection diode (6)Drain 2 Body diode z Absolute maximum ratings (Ta=25C) <MOSFET> Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage V 12 V GSS Continuous ID 1.5 A Drain current 1 Pulsed IDP 6.0 A Source current Continuous IS 0.6 A (Body diode) 1 Pulsed ISP 6.0 A Channel temperature Tch 150 C 2 P Power dissipation D 0.7 W / ELEMENT 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board <Di> Parameter Symbol Limits Unit Repetitive peak reverse voltage VRM 25 V Reverse voltage V 20 V R Forward current IF 0.7 A 1 10 Forward current surge peak IFSM A Junction temperature Tj 150 C 2 Power dissipation PD 0.5 W / ELEMENT 1 60Hz 1cycle 2 Mounted on ceramic board 1/4 Not Recommended for New Designs 0.2Max.US6U37 Transistors <MOSFET and Di> Parameter Symbol Limits Unit 1 Power dissipation PD 1.0 W / TOTAL Range of storage temperature Tstg 55 to +150 C 1 Mounted on a ceramic board z Electrical characteristics (Ta=25C) <MOSFET> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=12V, VDS=0V Drain-source breakdown voltage V 30 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 30V, VGS=0V Gate threshold voltage VGS (th) 0.5 1.5 V VDS= 10V, ID= 1mA 170 240 m I = 1.5A, V = 4.5V D GS Static drain-source on-state RDS (on) 180 250 m ID= 1.5A, VGS= 4V resistance 240 340 m ID= 1.5A, VGS= 2.5V Forward transfer admittance Y 1.5 SV = 10V, I = 1.5A fs DS D Input capacitance Ciss 80 pF VDS= 10V Output capacitance Coss 14 pF VGS=0V Reverse transfer capacitance C 12 pF f=1MHz rss Turn-on delay time td (on) 7 ns VDD 15V ID= 0.75A Rise time tr 9 ns VGS= 4.5V Turn-off delay time t 15 ns d (off) RL 20 Fall time tf 6 ns RG=10 Total gate charge Qg 1.6 2.2 nC VDD 15V, VGS= 4.5V Gate-source charge Qgs 0.5 nC ID= 1.5A Gate-drain charge Qgd0.3 nC RL 10, R G= 10 Pulsed <Body diode characteristics (Source-drain)> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 0.6A, VGS=0V <Di> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 0.49 V I = 0.7A F V = 20V Reverse current IR 200 A R 2/4 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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