X-On Electronics has gained recognition as a prominent supplier of UT6JA2TCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. UT6JA2TCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

UT6JA2TCR ROHM

UT6JA2TCR electronic component of ROHM
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See Product Specifications
Part No.UT6JA2TCR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET -30V Pch+Pch Si MOSFET
Datasheet: UT6JA2TCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7348 ea
Line Total: USD 0.73 
Availability - 5800
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5800
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7348
10 : USD 0.5907
100 : USD 0.4257
500 : USD 0.3487
1000 : USD 0.3289
3000 : USD 0.2882

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UT6JA2TCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UT6JA2TCR and other electronic components in the MOSFETs category and beyond.

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UT6JA2 Datasheet -30V Pch+Pch Middle Power MOSFET llOutline DFN2020-8D V -30V DSS R (Max.) 70m DS(on) HUML2020L8 I 4.0A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance. 2) Small Surface Mount Package. 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Quantity (pcs) 3000 Taping code TCR Marking JA2 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS Continuous drain current I 4.0 A D *1 I Pulsed drain current 12 A DP V Gate - Source voltage 20 V GSS *2 Avalanche current, single pulse I -3.0 A AS *2 Avalanche energy, single pulse E 6.5 mJ AS *3 P Power dissipation 2.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.002 UT6JA2 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -22 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 100 nA GSS DS GS leakage current Gate threshold V V = V , I = -1mA -1.0 - -2.5 V GS(th) DS GS D voltage V I = -1mA GS(th) D Gate threshold voltage - 2.9 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -4.0A - 55 70 GS D Static drain - source *4 R m DS(on) on - state resistance V = -4.5V, I = -4.0A - 80 103 GS D R Gate resistance f=1MHz, open drain - 13 - G Forward Transfer *4 Y V = -5V, I = -3A 2.5 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 L 1mH, V = -15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a Cu board (40400.8mm) *4 Pulsed www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/11 20190527 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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