2N7002 SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR 2N7002 type is a SILICON MOSFET N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. MARKING CODE: 702 SOT-23 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 60 V DS Drain-Gate Voltage V 60 V DG Gate-Source Voltage V 40 V GS Continuous Drain Current (T=25C) I 115 mA C D Continuous Drain Current (T=100C) I 75 mA C D Continuous Source Current (Body Diode) I 115 mA S Maximum Pulsed Drain Current I 800 mA DM Maximum Pulsed Source Current I 800 mA SM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=20V 100 nA GSSF GS I V=20V 100 nA GSSR GS I V =60V, V=0 1.0 A DSS DS GS I V =60V, V =0, T=125C 500 A DSS DS GS A I V =10V, V =10V 500 mA D(ON) DS GS BV I=10A 60 105 V DSS D V V =V , I=250A 1.0 2.1 2.5 V GS(th) DS GS D V V =10V, I=500mA 3.75 V DS(ON) GS D V V =5.0V, I =50mA 0.375 V DS(ON) GS D V V =0, I=11.5mA 1.5 V SD GS S r V =10V, I=500mA 3.7 7.5 DS(ON) GS D r V =10V, I =500mA, T=100C 13.5 DS(ON) GS D A r V =5.0V, I=50mA 6.2 7.5 DS(ON) GS D r V =5.0V, I =50mA, T=100C 13.5 DS(ON) GS D A g V =10V, I=200mA 80 mS FS DS D R5 (31-January 2011)2N7002 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MAX UNITS C V =25V, V =0, f=1.0MHz 5.0 pF rss DS GS C V =25V, V =0, f=1.0MHz 50 pF iss DS GS C V =25V, V =0, f=1.0MHz 25 pF oss DS GS t V =30V, I =200mA, R =25, R =150 20 ns on DD D G L t V =30V, I =200mA, R =25, R =150 20 ns off DD D G L SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: 702 R5 (31-January 2011) www.centralsemi.com