X-On Electronics has gained recognition as a prominent supplier of UT6K30TCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. UT6K30TCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

UT6K30TCR ROHM

UT6K30TCR electronic component of ROHM
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See Product Specifications
Part No.UT6K30TCR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 60V NCH+NCH POWER
Datasheet: UT6K30TCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.573 ea
Line Total: USD 1.57 
Availability - 564
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
564
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.573
10 : USD 1.0043
25 : USD 0.8338
100 : USD 0.6985
250 : USD 0.6347
500 : USD 0.5753
1000 : USD 0.5346
3000 : USD 0.4983
6000 : USD 0.4785

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the UT6K30TCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UT6K30TCR and other electronic components in the MOSFETs category and beyond.

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UT6K30 Datasheet 60V Nch+Nch Power MOSFET llOutline DFN2020-8D V 60V DSS R (Max.) 153m DS(on) HUML2020L8 I 3.0A D P 2W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type DC/DC Converter Basic ordering unit (pcs) 3000 Taping code TR Marking K30 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 60 V DSS Continuous drain current I 3.0 A D *1 I Pulsed drain current 12 A DP V Gate - Source voltage 20 V GSS *2 Avalanche current, single pulse I 3.0 A AS *2 Avalanche energy, single pulse E 1.3 mJ AS *3 P Power dissipation 2 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/11 20170526 - Rev.001 UT6K30 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA - - 60 V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 60 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 10 A GSS DS GS leakage current Gate threshold V V = V , I = 50A 1.3 - 2.7 V GS(th) DS GS D voltage V I = 1mA GS(th) D Gate threshold voltage - -5.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 3.0A - 111 153 GS D Static drain - source *4 R m DS(on) on - state resistance V = 4.5V, I = 3.0A - 162 223 GS D R Gate resistance f=1MHz, open drain - 5.3 - G Forward Transfer *4 Y V = 5.0V, I = 3A 1.7 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 L 0.2mH, V = 30V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a Cu boad (40400.8mm) *4 Pulsed www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2/11 20170526 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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