X-On Electronics has gained recognition as a prominent supplier of UT6JA3TCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. UT6JA3TCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

UT6JA3TCR ROHM

UT6JA3TCR electronic component of ROHM
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See Product Specifications
Part No.UT6JA3TCR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET -20V PCH+PCH POWER
Datasheet: UT6JA3TCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0406 ea
Line Total: USD 1.04 
Availability - 2494
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2494
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0406
10 : USD 0.6622
100 : USD 0.4477
250 : USD 0.4114
500 : USD 0.3663
1000 : USD 0.3366
3000 : USD 0.3146
6000 : USD 0.2992
9000 : USD 0.2882

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the UT6JA3TCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UT6JA3TCR and other electronic components in the MOSFETs category and beyond.

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UT6JA3 Datasheet -20V Pch+Pch Power MOSFET llOutline DFN2020-8D V -20V DSS R (Max.) 59m DS(on) HUML2020L8 I 5.0A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Quantity (pcs) 3000 Taping code TCR Marking JA3 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -20 V DSS Continuous drain current I 5.0 A D *1 I Pulsed drain current 12 A DP V Gate - Source voltage 8 V GSS *2 Avalanche current, single pulse I -2.3 A AS *2 Avalanche energy, single pulse E 4.0 mJ AS *3 P Power dissipation 2.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.002 UT6JA3 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient R - - 62.5 /W thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -10.3 - mV/ temperature coefficient T j referenced to 25 Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 0V, V = 8V - - 100 nA GSS DS GS leakage current Gate threshold V V = V , I = -1mA -0.5 - -1.5 V GS(th) DS GS D voltage V I = -1mA GS(th) D Gate threshold voltage - 1.7 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -5.0A - 42 59 GS D Static drain - source *4 R V = -2.5V, I = -2.5A - 54 76 m DS(on) GS D on - state resistance V = -1.8V, I = -1.3A - 76 118 GS D Gate resistance R f=1MHz, open drain - 9.5 - G Forward Transfer *4 Y V = -5V, I = -3A 4.1 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 L 1mH, V = -10V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a Cu board (40400.8mm) *4 Pulsed www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/11 20190527 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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