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X-On Electronics has gained recognition as a prominent supplier of SSM3K48FU,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3K48FU,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3K48FU,LF Toshiba

SSM3K48FU,LF electronic component of Toshiba
SSM3K48FU,LF Toshiba
SSM3K48FU,LF MOSFETs
SSM3K48FU,LF  Semiconductors

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See Product Specifications
Part No. SSM3K48FU,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET Small Signal MOSFET N-ch VDSS=30V VGSS=+-20V ID=0.1A RDSON=3.2Ohm @ 4.0V in USM package
Datasheet: SSM3K48FU,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0795 ea
Line Total: USD 238.5 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Wed. 08 Jan to Tue. 14 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0795
6000 : USD 0.0664
15000 : USD 0.0564
30000 : USD 0.0531
75000 : USD 0.0498
150000 : USD 0.0432

0
Ship by Wed. 08 Jan to Tue. 14 Jan
MOQ : 1
Multiples : 1
1 : USD 0.4458
10 : USD 0.357
100 : USD 0.1893
500 : USD 0.1245
1000 : USD 0.0847

0
Ship by Wed. 08 Jan to Tue. 14 Jan
MOQ : 1
Multiples : 1
1 : USD 0.4458
10 : USD 0.357
100 : USD 0.1893
500 : USD 0.1245
1000 : USD 0.0847

0
Ship by Mon. 06 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 0.8273
10 : USD 0.6769
100 : USD 0.1504
500 : USD 0.0953
1000 : USD 0.0651
3000 : USD 0.0522
24000 : USD 0.0481

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SSM3K48FU,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3K48FU,LF and other electronic components in the MOSFETs category and beyond.

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SSM3K48FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM3K48FU Load Switching Applications Unit: mm 2.5-V drive Low ON-resistance: R = 3.2 (max) ( V = 4.0 V) DS(ON) GS R = 5.4 (max) ( V = 2.5 V) DS(ON) GS Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-Source voltage V 30 V DSS Gate-Source voltage V 20 V GSS DC I 100 D Drain current mA Pulse I 400 DP 1. Gate USM Power dissipation P (Note 1) 150 mW 2. Source D 3. Drain Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of JEITA SC-70 high temperature/current/voltage and the significant change in TOSHIBA 2-2E1E temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 6.0 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 Note 1: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 0.6mm 3) 0.6 mm 1.0 mm Marking Equivalent Circuit (top view) 3 3 DZ 1 2 1 2 Start of commercial production 2010-10 1 2014-03-01 SSM3K48FU Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit V I = 0.1 mA, V = 0 V 30 (BR) DSS D GS Drain-Source breakdown voltage V V I = 0.1 mA, V = -10 V (Note 3) 16 (BR) DSX D GS Drain cut-off current I V = 30 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 12 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 0.1 mA 0.8 1.5 V th DS D Forward transfer admittance Y V = 3 V, I = 10 mA (Note 2) 33 mS fs DS D I = 10 mA, V = 4 V (Note 2) 2.0 3.2 D GS Drain-Source ON resistance R DS (ON) I = 10 mA, V = 2.5 V (Note 2) 3.0 5.4 D GS Input capacitance C 15.1 iss Reverse transfer capacitance C V = 3 V, V = 0 V, f = 1 MHz 7.8 pF DS GS rss Output capacitance C 12.4 oss Turn-on time t V = 5 V, I = 10 mA, 35 on DD D Switching time ns Turn-off time t V = 0 to 5 V, R = 50 180 GS G off Drain-source forward voltage V I = -100 mA, V = 0 V (Note 2) -0.83 -1.2 V DSF D GS Note 2: Pulse test Note 3: If a reverse bias is applied between gate and source, this device enters V mode. Note that the (BR)DSX drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit (a) Test circuit (b) V IN 5 V OUT 90% 5 V IN 10% 0 0 V 10 s V DD (c) V V OUT DD 90% V = 5 V DD R = 50 G 10% Duty 1% V DS (ON) t t r f : t , t < 5 ns V IN r f Common Source t t on off Ta = 25C Precaution V can be expressed as voltage between gate and source when low operating current value is I = 0.1 mA for this th D product. For normal switching operation, V requires higher voltage than V and V requires lower voltage GS (on) th GS (off) than V . (Relationship can be established as follows: V < V < V ) th GS (off) th GS (on) Please take this into consideration for using the device. Do not use this device under avalanche mode. It may cause the device to break down. Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 2 2014-03-01 R G R L

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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