SSM6K208FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K208FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.8V drive Low ON-resistance: R = 296 m (max) ( V = 1.8 V) on GS R = 177 m (max) ( V = 2.5 V) on GS R = 133 m (max) ( V = 4.0 V) on GS Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source voltage V 30 V DSS Gate-Source voltage V 12 V GSS DC I 1.9 D Drain current A 1,2,5,6: Drain Pulse I 3.8 DP 3 : Gate ES6 Drain power dissipation P (Note 1) 500 mW D 4 : Source Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in TOSHIBA 2-2N1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 3mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. 2 (25.4 mm 25.4 mm 1.6mm, Cu Pad: 645 mm ) Start of commercial production 2008-01 1 2014-03-01 SSM6K208FE Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. MaxUnit V I = 1 mA, V = 0 V 30 (BR) DSS D GS Drain-Source breakdown voltage V V I = 1 mA, V = 12 V 18 (BR) DSX D GS Drain cut-off current I V = 30 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 12 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.4 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 1.0 A (Note 2) 2 3.9 S fs DS D I = 1.0 A, V = 4 V (Note 2) 103 133 D GS Drainsource ON-resistance R m I = 0.8 A, V = 2.5 V (Note 2) 125 177 DS (ON) D GS I = 0.5 A, V = 1.8 V (Note 2) 165 296 D GS Input capacitance C 123 iss Output capacitance C V = 15 V, V = 0 V, f = 1 MHz 43 pF DS GS oss Reverse transfer capacitance C 18 rss Total Gate Charge Q 1.9 g = 15V, I = 1.9 A, V = 4 V nC Gate-Source Charge Q V 1.1 DS D GS gs Gate-Drain Charge Q 0.8 gd Turn-on time t 9.2 on V = 15 V, I = 1.0 A, DD D Switching time ns V = 0 to 2.5 V, R = 4.7 Turn-off time t GS G 6.4 off Drain-Source forward voltage V I = 1.9 A, V = 0 V (Note 2) 0.83 1.2 V DSF D GS Note 2: Pulse test 2 2014-03-01