X-On Electronics has gained recognition as a prominent supplier of SSM6K208FE,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM6K208FE,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM6K208FE,LF Toshiba

SSM6K208FE,LF electronic component of Toshiba
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Part No.SSM6K208FE,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET Small Signal MOSFET N-ch VDSS=30V VGSS=+-12V ID=1.9A RDSON=0.133Ohm @ 4.0V in ES6 package
Datasheet: SSM6K208FE,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.1636 ea
Line Total: USD 1.16 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 4000
Multiples : 4000
4000 : USD 0.2954

0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4473
10 : USD 0.299
100 : USD 0.2081
500 : USD 0.1667
1000 : USD 0.1426
4000 : USD 0.1311
8000 : USD 0.1219

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SSM6K208FE,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM6K208FE,LF and other electronic components in the MOSFETs category and beyond.

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SSM6K208FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K208FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.8V drive Low ON-resistance: R = 296 m (max) ( V = 1.8 V) on GS R = 177 m (max) ( V = 2.5 V) on GS R = 133 m (max) ( V = 4.0 V) on GS Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source voltage V 30 V DSS Gate-Source voltage V 12 V GSS DC I 1.9 D Drain current A 1,2,5,6: Drain Pulse I 3.8 DP 3 : Gate ES6 Drain power dissipation P (Note 1) 500 mW D 4 : Source Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in TOSHIBA 2-2N1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 3mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. 2 (25.4 mm 25.4 mm 1.6mm, Cu Pad: 645 mm ) Start of commercial production 2008-01 1 2014-03-01 SSM6K208FE Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. MaxUnit V I = 1 mA, V = 0 V 30 (BR) DSS D GS Drain-Source breakdown voltage V V I = 1 mA, V = 12 V 18 (BR) DSX D GS Drain cut-off current I V = 30 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 12 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.4 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 1.0 A (Note 2) 2 3.9 S fs DS D I = 1.0 A, V = 4 V (Note 2) 103 133 D GS Drainsource ON-resistance R m I = 0.8 A, V = 2.5 V (Note 2) 125 177 DS (ON) D GS I = 0.5 A, V = 1.8 V (Note 2) 165 296 D GS Input capacitance C 123 iss Output capacitance C V = 15 V, V = 0 V, f = 1 MHz 43 pF DS GS oss Reverse transfer capacitance C 18 rss Total Gate Charge Q 1.9 g = 15V, I = 1.9 A, V = 4 V nC Gate-Source Charge Q V 1.1 DS D GS gs Gate-Drain Charge Q 0.8 gd Turn-on time t 9.2 on V = 15 V, I = 1.0 A, DD D Switching time ns V = 0 to 2.5 V, R = 4.7 Turn-off time t GS G 6.4 off Drain-Source forward voltage V I = 1.9 A, V = 0 V (Note 2) 0.83 1.2 V DSF D GS Note 2: Pulse test 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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