X-On Electronics has gained recognition as a prominent supplier of SSM6K211FE,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM6K211FE,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM6K211FE,LF Toshiba

SSM6K211FE,LF electronic component of Toshiba
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Part No.SSM6K211FE,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET Small-Signal MOSFET
Datasheet: SSM6K211FE,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6156 ea
Line Total: USD 0.62 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 4000
Multiples : 4000
4000 : USD 0.2015
8000 : USD 0.1995
12000 : USD 0.1976
20000 : USD 0.1955
24000 : USD 0.1936
28000 : USD 0.1916
40000 : USD 0.1898
60000 : USD 0.1878
100000 : USD 0.186

0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6156
10 : USD 0.5008
100 : USD 0.3162
500 : USD 0.24
1000 : USD 0.1875
2000 : USD 0.175
4000 : USD 0.15
8000 : USD 0.1416
24000 : USD 0.1392

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Width
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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We are delighted to provide the SSM6K211FE,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM6K211FE,LF and other electronic components in the MOSFETs category and beyond.

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SSM6K211FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS) SSM6K211FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: R = 118 m (max) ( V = 1.5 V) on GS R = 82 m (max) ( V = 1.8 V) on GS R = 59 m (max) ( V = 2.5 V) on GS R = 47 m (max) ( V = 4.5 V) on GS Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage V 20 V DSS Gate-source voltage V 10 V GSS DC I 3.2 D Drain current A Pulse I 6.4 DP 1,2, 5, 6: Drain Drain power dissipation P (Note 1) 500 mW D 3: Gate 4: Source Channel temperature T 150 C ES6 ch Storage temperature T 55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in TOSHIBA 2-2N1J temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 3 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking Equivalent Circuit (top view) 65 4 6 5 4 NQ 123 1 2 3 Start of commercial production 2008-10 1 2014-03-01 SSM6K211FE Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. MaxUnit V I = 1 mA, V = 0 V 20 (BR) DSS D GS V Drain-source breakdown voltage V I = 1 mA, V = 10 V 12 (BR) DSX D GS Drain cutoff current I V = 20 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 10 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.35 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 2.0 A (Note 2) 5.5 11.0 S fs DS D I = 2.0 A, V = 4.5 V (Note 2) 36 47 D GS I = 2.0 A, V = 2.5 V (Note 2) 44 59 D GS Drain-source ON-resistance R m DS (ON) I = 1.0 A, V = 1.8 V (Note 2) 55 82 D GS I = 0.5 A, V = 1.5 V (Note 2) 66 118 D GS Input capacitance C 510 iss Output capacitance C V = 10 V, V = 0 V, f = 1 MHz 98 pF oss DS GS Reverse transfer capacitance C 85 rss Total Gate Charge Q 10.8 g Gate-Source Charge V = 10 V, I = 3.2 A, V = 4.5 V nC Q 8.6 gs DS D GS Gate-Drain Charge 2.2 Q gd Turn-on time t 16 on V = 10 V, I = 1.0 A, DD D Switching time ns V = 0 to 2.5 V, R = 4.7 Turn-off time t GS G 40 off Drain-source forward voltage V I = 3.2 A, V = 0 V (Note 2) 0.84 1.2 V DSF D GS Note 2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) V IN 2.5 V 90% V = 10 V DD 2.5 V OUT R = 4.7 G 10% IN 0 V Duty 1% 0 V : t , t < 5 ns IN r f V DD Common Source 90% 10 s (c) V Ta = 25C OUT 10% V DD V DS (ON) t t r f t t on off Usage Considerations Let V be the voltage applied between gate and source that causes the drain current (I ) to below (1 mA for the th D SSM6K211FE). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V th. GS(off) th GS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 R G

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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TS4
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