SSM6K211FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS) SSM6K211FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: R = 118 m (max) ( V = 1.5 V) on GS R = 82 m (max) ( V = 1.8 V) on GS R = 59 m (max) ( V = 2.5 V) on GS R = 47 m (max) ( V = 4.5 V) on GS Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage V 20 V DSS Gate-source voltage V 10 V GSS DC I 3.2 D Drain current A Pulse I 6.4 DP 1,2, 5, 6: Drain Drain power dissipation P (Note 1) 500 mW D 3: Gate 4: Source Channel temperature T 150 C ES6 ch Storage temperature T 55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in TOSHIBA 2-2N1J temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 3 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking Equivalent Circuit (top view) 65 4 6 5 4 NQ 123 1 2 3 Start of commercial production 2008-10 1 2014-03-01 SSM6K211FE Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. MaxUnit V I = 1 mA, V = 0 V 20 (BR) DSS D GS V Drain-source breakdown voltage V I = 1 mA, V = 10 V 12 (BR) DSX D GS Drain cutoff current I V = 20 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 10 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.35 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 2.0 A (Note 2) 5.5 11.0 S fs DS D I = 2.0 A, V = 4.5 V (Note 2) 36 47 D GS I = 2.0 A, V = 2.5 V (Note 2) 44 59 D GS Drain-source ON-resistance R m DS (ON) I = 1.0 A, V = 1.8 V (Note 2) 55 82 D GS I = 0.5 A, V = 1.5 V (Note 2) 66 118 D GS Input capacitance C 510 iss Output capacitance C V = 10 V, V = 0 V, f = 1 MHz 98 pF oss DS GS Reverse transfer capacitance C 85 rss Total Gate Charge Q 10.8 g Gate-Source Charge V = 10 V, I = 3.2 A, V = 4.5 V nC Q 8.6 gs DS D GS Gate-Drain Charge 2.2 Q gd Turn-on time t 16 on V = 10 V, I = 1.0 A, DD D Switching time ns V = 0 to 2.5 V, R = 4.7 Turn-off time t GS G 40 off Drain-source forward voltage V I = 3.2 A, V = 0 V (Note 2) 0.84 1.2 V DSF D GS Note 2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) V IN 2.5 V 90% V = 10 V DD 2.5 V OUT R = 4.7 G 10% IN 0 V Duty 1% 0 V : t , t < 5 ns IN r f V DD Common Source 90% 10 s (c) V Ta = 25C OUT 10% V DD V DS (ON) t t r f t t on off Usage Considerations Let V be the voltage applied between gate and source that causes the drain current (I ) to below (1 mA for the th D SSM6K211FE). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V th. GS(off) th GS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 R G