DMP2066LVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D V R max (BR)DSS DS(ON) T = +25C Low Gate Threshold Voltage A Low Input Capacitance 45m V = -4.5V -4.5A GS -20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 65m V = -2.5V -3.8A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET is designed to minimize the on-state Mechanical Data resistance (R ), and yet maintain superior switching performance, DS(on) Case: SOT26 making it ideal for high-efficiency power management applications. Cas e Mat erial: Molded P las t ic, Green Molding Com pound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram General Purpose Interfacing Switch Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (Approximate) D SOT26 D 1 6 D G D 2 5 D G 3 4 S S Top View Top View Equivalent Circuit Pin-Out Ordering Information (Note 4) Part Number Case Packaging DMP2066LVT-7 SOT26 3,000/Tape & Reel DMP2066LVT-13 SOT26 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2066LVT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 8 V GSS Drain Current (Note 5) Continuous T = +25C -4.5 A A I D -3.7 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I -20 A DM Body-Diode Continuous Current (Note 5) I -2.0 A S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) 1.2 W P D Steady State 100 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 74 Total Power Dissipation (Note 6) 1.8 W P D Steady State 70 Thermal Resistance, Junction to Ambient (Note 6) R C/W JA t<10s 46 Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition STATIC PARAMETERS (Note 7) Drain-Source Breakdown Voltage BV -20 V I = -250A, V = 0V DSS D GS Zero Gate Voltage Drain Current V = -16V, V = 0V -1 DS GS I A DSS T = +55C (Note 8) -10 J V = -16V, V = 0V DS GS Zero Gate Voltage Drain Current T = +150C (Note 8) -100 A J I V = -16V, V = 0V DSS DS GS Gate-Body Leakage Current I 100 nA V = 0V, V = 8V GSS DS GS Gate Threshold Voltage V -0.4 -1.5 V V = V , I = -250A GS(th) DS GS D 25 45 V = -4.5V, I = -4.5A GS D Static Drain-Source On-Resistance R m DS (ON) 65 33 VGS = -2.5V, ID = -3.8A Static Drain-Source On-Resistance T = +125C (Note 8) 72 m J R V = -4.5V, I = -4.5A DS (ON) GS D Diode Forward Voltage -0.5 -0.72 -1.4 V V I = -2.1A, V = 0V SD S GS On State Drain Current (Note 8) 10 A VDS 5V, VGS = 4.5V I D(ON) DYNAMIC PARAMETERS (Note 8) Input Capacitance C 1,496 2,990 pF iss V = -15V, V = 0V DS GS Output Capacitance C 130 260 pF oss f = 1.0MHz Reverse Transfer Capacitance C 116 230 pF rss Total Gate Charge Q 14.4 25 G V = -10V, V = -4.5V, DS GS Gate-Source Charge Q 2.6 5 nC GS I = -4.5A D Gate-Drain Charge 2.7 5.5 QGD Turn-On Delay Time 8.5 30 t d(on) Rise Time 11 60 t r VDS = -5V, VGS = -4.5V, ns Turn-Off Delay Time 61 130 I = -1A, R = 6.0 t D G d(off) Fall Time 25 100 t f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMP2066LVT February 2015 Diodes Incorporated www.diodes.com Document number: DS36578 Rev. 4 - 2 NEW PRODUCT