SSM6K404TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K404TU High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: R = 147 m (max) ( V = 1.5 V) DS(ON) GS 2.10.1 R = 100 m (max) ( V = 1.8 V) DS(ON) GS 1.70.1 R = 70 m (max) ( V = 2.5 V) DS(ON) GS R = 55 m (max) ( V = 4.0 V) DS(ON) GS 1 6 Absolute Maximum Ratings (Ta = 25C) 2 5 Characteristic Symbol Rating Unit 3 Drainsource voltage V 20 V 4 DSS Gatesource voltage V 10 V GSS DC I 3.0 D Drain current A Pulse I 6.0 DP P (Note 1) Power dissipation D 500 mW Channel temperature T 150 C ch 1, 2, 5, 6 : Drain Storage temperature T 55 to 150 C stg 3 : Gate 4 : Source Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, UF6 etc.) may cause this product to decrease in the reliability significantly JEDEC even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. JEITA Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating TOSHIBA 2-2T1D Concept and Methods) and individual reliability data (i.e. reliability test Weight: 7.0 mg (typ.) report and estimated failure rate, etc). Note 1: Mounted on an FR4 board 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. MaxUnit V I = 1 mA, V = 0 V 20 V (BR) DSS D GS Drainsource breakdown voltage V I = 1 mA, V = -10 V 12 V (BR) DSX D GS Drain cutoff current I V =20 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 10 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.35 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 2.0 A (Note2) 5.5 11 S fs DS D I = 2.0 A, V = 4.0 V (Note2) 43 55 D GS I = 2.0 A, V = 2.5 V (Note2) 53 70 D GS Drainsource ON-resistance R m DS (ON) I = 1.0 A, V = 1.8 V (Note2) 67 100 D GS I = 0.5 A, V = 1.5 V (Note2) 82 147 D GS Input capacitance C 400 iss Output capacitance C V = 10 V, V = 0 V, f = 1 MHz 68 pF oss DS GS Reverse transfer capacitance C 60 rss Total Gate Charge Q 5.9 g V = 10 V, I = 3.0 A DS D nC GateSource Charge Q 4.1 gs V = 4 V GS GateDrain Charge Q 1.8 gd Turn-on time t V = 10 V, I = 2.0 A 14 on DS D Switching time ns V = 0 to 2.5 V, R = 4.7 Turn-off time t 15 off GS G Drainsource forward voltage V I = - 3.0 A, V = 0 V (Note2) -0.85 -1.2 V DSF D GS Note 2: Pulse test Start of commercial production 2007-01 1 2014-03-01 2.00.1 1.30.1 0.70.05 0.65 0.65 +0.06 0.16-0.05 +0.1 0.3-0.05SSM6K404TU Switching Time Test Circuit (a) Test Circuit (b) V IN 2.5 V OUT 90% 2.5 V IN 10% 0 V 0 V DD (c) V OUT 10 s V 90% DD V = 10 V 10% DD V DS (ON) R = 4.7 G t t f r Duty 1% V : t , t < 5 ns t t IN r f on off Common Source Ta = 25C Marking Equivalent Circuit (top view) 6 5 4 5 4 6 KKB 1 2 3 12 3 Notice on Usage V can be expressed as the voltage between gate and source when the low operating current value is I = 1 mA for th D this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th GS (off) voltage than V (The relationship can be established as follows: V < V < V ) th. GS (off) th GS (on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 R G