X-On Electronics has gained recognition as a prominent supplier of SSM6L12TU,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM6L12TU,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM6L12TU,LF Toshiba

SSM6L12TU,LF electronic component of Toshiba
SSM6L12TU,LF Toshiba
SSM6L12TU,LF MOSFETs
SSM6L12TU,LF  Semiconductors

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See Product Specifications
Part No. SSM6L12TU,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET LowON Res MOSFET ID=-0.5A VDSS=-30V
Datasheet: SSM6L12TU,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1284 ea
Line Total: USD 385.2 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.1284
6000 : USD 0.1263
12000 : USD 0.124
18000 : USD 0.1219
24000 : USD 0.1198

0
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 1.3981
10 : USD 0.6323
100 : USD 0.3138
500 : USD 0.2361
1000 : USD 0.1771
3000 : USD 0.1595
9000 : USD 0.1398
24000 : USD 0.1346
45000 : USD 0.1326

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Product Type
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SSM6L12TU,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM6L12TU,LF and other electronic components in the MOSFETs category and beyond.

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SSM6L12TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L12TU High-Speed Switching Applications Optimum for high-density mounting in small packages Low ON-resistance Q1: R = 180m (max) ( V = 2.5 V) DS(ON) GS Unit: mm Q2: R = 430m (max) ( V = -2.5 V) DS(ON) GS 2.10.1 1.70.1 Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit 1 6 Drain-source voltage V 30 V DS Gate-source voltage V 12 V 5 GSS 2 DC I 0.5 D Drain current A 4 3 Pulse I 1.5 DP Q2 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V -20 V DS 1.Source1 4.Source2 Gate-source voltage V 12 V GSS 2.Gate1 5.Gate2 DC I -0.5 D 3.Drain2 6.Drain1 Drain current A Pulse I -1.5 DP UF6 Absolute Maximum Ratings (Q1,Q2 Common) JEDEC (Ta = 25C) JEITA Characteristics Symbol Rating Unit TOSHIBA 2-2T1B P D Power dissipation 500 mW Weight: 7.0 mg (typ.) (Note 1) Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. (total dissipation) 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking Equivalent Circuit (top view) 654 6 5 4 Q1 K9 Q2 1 2 3 123 1 2010-02-15 2.00.1 1.30.1 0.70.05 0.65 0.65 +0.06 0.16-0.05 +0.1 0.3-0.05SSM6L12TU Q1 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 12 V, V = 0 1 A GSS GS DS V I = 1 mA, V = 0 30 (BR) DSS D GS Drain-source breakdown voltage V V I = 1 mA, V = 12 V 18 (BR) DSX D GS Drain cut-off current I V = 30 V, V = 0 1 A DSS DS GS Gate threshold voltage V V = 3 V, I = 0.1 mA 0.5 1.1 V th DS D Forward transfer admittance Y V = 3 V, I = 0.25 A (Note 2) 1.0 2.0 S fs DS D I = 0.50 A, V = 4.5 V (Note 2) 120 145 D GS Drain-source on-resistance R m DS (ON) I = 0.25 A, V = 2.5 V (Note 2) 140 180 D GS Input capacitance C V = 10 V, V = 0, f = 1 MHz 245 pF iss DS GS Reverse transfer capacitance C V = 10 V, V = 0, f = 1 MHz 33 pF rss DS GS Output capacitance C V = 10 V, V = 0, f = 1 MHz 41 pF oss DS GS Turn-on time t V = 10 V, I = 0.25 A, 9 on DD D Switching time ns Turn-off time t V = 0 to 2.5 V, R = 4.7 15 GS G off Note 2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) V IN 2.5 V 90% OUT 2.5 V IN 10% 0 V 0 V DD (c) V 10 s OUT 90% V DD 10% V = 10 V DD V DS (ON) R = 4.7 t t G r f Duty 1% t t V : t , t < 5 ns on off IN r f Common Source Ta = 25C Precaution V can be expressed as the voltage between gate and source when the low operating current value is I =100 A for th D this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th GS (off) voltage than V th. (The relationship can be established as follows: V < V < V ) GS (off) th GS (on) Please take this into consideration when using the device. 2 2010-02-15 R G

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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