DMG10N60SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Input Capacitance BV R DSS DS(ON) T = +25C C High BV Rating for Power Application DSS 600V 12A 0.75 VGS = 10V Low Input/Output Leakage Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. DMG10N60SCT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 600 V DSS Gate-Source Voltage V 30 V GSS T = +25C Steady C 12 A Continuous Drain Current (Note 5) VGS = 10V ID State 7.9 TC = +100C Steady 1.5 A Continuous Drain Current (Note 5) VGS = 10V TA = +25C ID State Maximum Body Diode Forward Current (Note 5) 12 A IS Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 15 A DM Avalanche Current, L = 60mH (Note 6) I 4.3 A AS Avalanche Energy, L = 60mH (Note 6) E 550 mJ AS Thermal Characteristics Characteristic Symbol Value Unit 178 TC = +25C Total Power Dissipation (Note 5) P W D 71 TC = +100C Total Power Dissipation (Note 5) TA = +25C PD 2.5 W 49 Thermal Resistance, Junction to Ambient (Note 5) RJA C/W 0.7 Thermal Resistance, Junction to Case (Note 5) RJC Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 600 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 600V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 24V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 2 3.2 4 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 0.6 0.75 V = 10V, I = 5A DS(ON) GS D Diode Forward Voltage 1 V VSD VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance 1587 Ciss VDS = 25V, f = 1.0MHz, Output Capacitance 149 pF Coss VGS = 0 Reverse Transfer Capacitance 10 Crss Gate Resistance 1.5 RG VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 10V) Qg 35 VDS = 480V, ID = 10A, Gate-Source Charge Q 6 nC gs V = 10V GS Gate-Drain Charge Q 13 gd Turn-On Delay Time t 25 D(ON) Turn-On Rise Time t 45 R VDS = 300V, RG = 25, ID = 10A, ns Turn-Off Delay Time 97 V = 10V tD(OFF) GS Turn-Off Fall Time 48 tF Body Diode Reverse Recovery Time ns tRR 319 VDS = 100V, IF = 10A ,dI/dt = Body Diode Reverse Recovery Charge C 100A/s QRR 3.5 Notes: 5. Device mounted on an infinite heatsink. 6. Guaranteed by design. Not subject to production testing. 7. Short duration pulse test used to minimize self-heating effect. 2 of 7 June 2020 DMG10N60SCT Diodes Incorporated www.diodes.com Document number: DS38891 Rev. 4 - 2