X-On Electronics has gained recognition as a prominent supplier of IPB120N04S4L02ATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPB120N04S4L02ATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPB120N04S4L02ATMA1 Infineon

IPB120N04S4L02ATMA1 electronic component of Infineon
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Part No.IPB120N04S4L02ATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N-CHANNEL 30/40V
Datasheet: IPB120N04S4L02ATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.9912 ea
Line Total: USD 2.99 
Availability - 9
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 2.9912
10 : USD 2.6138
30 : USD 2.3887
100 : USD 2.1616
500 : USD 2.0567
1000 : USD 2.0103

   
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We are delighted to provide the IPB120N04S4L02ATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPB120N04S4L02ATMA1 and other electronic components in the MOSFETs category and beyond.

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The IPB120N04S4L02ATMA1 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed and manufactured by Infineon. It is an N-channel device, meaning it is capable of switching a current flow from the source to the drain when a certain threshold of gate voltage is reached.The device has a maximum voltage of 30-40V, meaning it can handle high currents up to 200A. It has a low gate charge of 4.2nC, meaning it needs a small amount of current to activate it. The device is also highly efficient due to its low on resistance of 0.04 ohm. The device also has a low threshold voltage of 4V, making it well suited for low voltage applications. The device also has a high peak current handling capacity of 120A. Overall, the IPB120N04S4L02ATMA1 is an excellent choice for high current switching applications as it is highly efficient and has a high voltage, current, and peak current handling capacity.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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