UF3C120040K3S UnitedSiC

35mW - 1200V SiC Cascode UF3C120040K3S Datasheet Description CASE CASE D (2) United Silicon Carbide s cascode products co-package its high- performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are G (1) excellent for switching inductive loads when used with recommended RC- snubbers, and any application requiring standard gate drive. 1 2 3 S (3) Part Number Package Marking TO-247-3L UF3C120040K3S UF3C120040K3S Features Typical Applications w Typical on-resistance R of 35mW w DS(on),typ EV charging w Maximum operating temperature of 175C w PV inverters Excellent reverse recovery w w Switch mode power supplies Low gate charge w w Power factor correction modules w Low intrinsic capacitance w Motor drives w ESD protected, HBM class 2 w Induction heating Very low switching losses (required RC-snubber loss negligible w under typical operating conditions) Maximum Ratings Parameter Test Conditions Value Symbol Units Drain-source voltage V 1200 V DS Gate-source voltage V DC -25 to +25 V GS T =25C 65 A C 1 I Continuous drain current D T =100C 47 A C 2 T =25C I 175 Pulsed drain current C A DM 3 E L=15mH, I =4.2A 132.3 Single pulsed avalanche energy mJ AS AS T =25C Power dissipation P 429 W tot C Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Max. lead temperature for soldering, T 250 C L 1/8 from case for 5 seconds Limited by T 1 J,max Pulse width t limited by T 2 p J,max 3 Starting T = 25C J 1 Rev. B, December 2018 For more information go to www.unitedsic.com. 35mW - 1200V SiC Cascode UF3C120040K3S Datasheet Electrical Characteristics (T = +25C unless otherwise specified) J Typical Performance - Static Value Parameter Symbol Test Conditions Units Min Typ Max BV V =0V, I =1mA Drain-source breakdown voltage 1200 V DS GS D V =1200V, DS 8 150 V =0V, T =25C GS J I Total drain leakage current mA DSS V =1200V, DS 35 V =0V, T =175C GS J V =0V, T =25C, DS j Total gate leakage current I 6 20 mA GSS V =-20V / +20V GS V =12V, I =40A, GS D 35 45 T =25C J R Drain-source on-resistance mW DS(on) V =12V, I =40A, GS D 73 T =175C J V =5V, I =10mA Gate threshold voltage V 4 5 6 V G(th) DS D Gate resistance R f=1MHz, open drain 4.5 W G Typical Performance - Reverse Diode Value Parameter Symbol Test Conditions Units Min Typ Max 1 I T =25C Diode continuous forward current 65 A S C 2 T =25C I 175 A Diode pulse current C S,pulse V =0V, I =20A, GS F 1.5 2 T =25C J V Forward voltage V FSD V =0V, I =20A, GS F 1.95 T =175C J V =800V, I =40A, R F Reverse recovery charge Q 358 nC rr V =-5V,R =10W GS G EXT di/dt=2400A/ms, Reverse recovery time t 25 ns rr T =25C J V =800V, I =40A, R F Reverse recovery charge Q 259 nC rr V =-5V,R =10W GS G EXT di/dt=2400A/ms, Reverse recovery time t 22 ns rr T =150C J 2 Rev. B, December 2018 For more information go to www.unitedsic.com.